Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices

Fu, Di; Xie, Dexin; Feng, Tingting; Zhang, Chenhui; Niu, Jiebin; Qian, He; Liu, Litian

doi:10.1109/led.2011.2132750

Cited by 49 publications

(39 citation statements)

References 11 publications

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“…A via‐hole structure is the RRAM device with ultra‐small scale, which is fabricated in a hole through a dielectric layer by techniques such as lithography and etch, The techniques are of vital importance because the precision not only directly defines the size of device but also influences the follow‐up processing techniques. For the sake of high‐density integration and excellent R off /R on ratio, size of the hole is required to be strictly controlled.…”

Section: Device Structure Designmentioning

confidence: 99%

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials

Long

Liu

et al. 2017

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Section: Device Structure Designmentioning

confidence: 99%

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials

Long

Liu

et al. 2017

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156

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“…Carbon-based materials, including amorphous carbon (a-C) [17]- [26], fullerene [27], graphene oxide [28], [29], carbon/ organic composite [30], and carbon nanotube (CNT) [31], have been shown to exhibit resistive switching behavior for nonvolatile memory application. Amorphous carbon is a noncrystalline carbon allotrope in which a long-range crystalline order is not present.…”

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confidence: 99%

Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon

Chai

Takei

et al. 2011

IEEE Trans. Electron Devices

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Abstract-There has been a strong demand for developing an ultradense and low-power nonvolatile memory technology. In this paper, we present a carbon-based resistive random access memory device with a carbon nanotube (CNT) electrode. An amorphous carbon layer is sandwiched between the fast-diffusing top metal electrode and the bottom CNT electrode, exhibiting a bipolar switching behavior. The use of the CNT electrode can substantially reduce the size of the active device area. We also demonstrate a carbon-based complementary resistive switch (CRS) consisting of two back-to-back connected memory cells, providing a route to reduce the sneak current in the cross-point memory. The bit information of the CRS cell is stored in a high-resistance state, thus reducing the power consumption of the CRS memory cell. This paper provides valuable early data on the effect of electrode size scaling down to nanometer size.Index Terms-Amorphous carbon (a-C), carbon nanotube (CNT), complementary resistive switching, nonvolatile memory, resistive random access memory (RRAM), resistive switching memory.

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“…As shown in Figure 7a www.advelectronicmat.de by applying a voltage pulse of 540 ps without any R s . [32,[56][57][58] If used in integrated circuits, a cell transistor could be used as the current limiter for each word line. Figure 7b shows the retention data of the five resistance states tuned by the electrical pulses, which can be sustained for 10 4 s under 0.1 V read voltage stress.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM

Chen

Huang

Zhao

et al. 2018

Adv Elect Materials

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better uniformity. [20] While for URS mode, owing to the single polarity operation, it allows a diode as the selector in crossbar arrays to settle the sneak-path issue. [21] And this passive crossbar array with one diode-one resistor (1D1R) structure offers advantages in achieving the highest integration density of 4F 2 [22] as well as enables simplified peripheral control elements to support large-scale integrated circuits. [23] To date, reliable BRS and URS behaviors have been observed in a wide variety of materials, including binary metal oxides HfO 2 , TaO x , ZnO, WO x , NiO, etc. [24][25][26][27][28][29] Beneficial to high density data storage, multilevel switchings have also been demonstrated in both BRS [24,25,30,31] and URS [27,32] devices, as well as devices with atypical coexistent BRS and URS. [33,34] Furthermore, in order to catch the speed of the microprocessor working in gigahertz lockstep, sub-nanosecond operation speed is required for nextgeneration memories, which has been obtained in BRS devices with binary memory states but was not achieved in any multilevel RRAMs. For example, operation speeds as fast as 300 and 100 ps were achieved in HfO x and Pt-SiO 2 based BRS RRAMs, respectively, [35][36][37] while the reliable multilevel control in BRS RRAMs was only obtained with operation speed of dozens or even hundreds of nanoseconds. [24,27,31,32] By comparison, no sub-nanosecond multilevel switchings were reported in URS RRAM. Therefore, it will be interesting to study the sub-nanosecond operating ability in a URS device, in which a typical high off/on resistance ratio may be able to host multilevel resistance states with ultrafast operation speed.As an important magnetic insulator, yttrium iron garnet Y 3 Fe 5 O 12 (YIG) has been used in microwave, acoustic, optical, and magneto-optical applications, as well as spintronic devices owing to its low damping constant and insulating ferromagnetic nature. [38][39][40] Besides the well-known magneto-optical memory applications for YIG, early in 1970, Bullock et al. found a repeatable URS behavior in Si-doped YIG crystal. [41] This discovery demonstrates the possible application of YIG as an RRAM device, but no further resistive switching investigations were carried out since then. The high performance of the Au/YIG/n-Si RRAM cells was herein reported with sub-nanosecond switching speed, high off/on resistance ratio, well endurance, and reliable retention at both room temperature and 85 °C. Multi resistance states were achieved during the DC voltage sweep as well as ultrafast pulse operation. Furthermore, YIG-based RRAM is fabricated on silicon substrate, further illustrating its promising potential for commercial application in memories.Resistive random access memory (RRAM) with ultrafast and multilevel switching is extremely promising for next-generation nonvolatile memory. Here, ultrafast unipolar resistive switchings (≈540 ps) with high off/on resistance ratio (≈10 4 ) are obtained in yttrium iron garnet Y 3 Fe 5 O 12 (YIG)-based resistive memory on ...

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Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices

Cited by 49 publications

References 11 publications

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials

Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon

Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM

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