Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

Abstract

Highly (002)-oriented and columnar-grained ZnO thin films were prepared by radio frequency magnetron sputtering at room temperature. The Pt∕ZnO∕Pt devices exhibit reversible and steady bistable resistance switching behaviors with a narrow dispersion of the resistance states and switching voltage. Only a low forming electric field was required to induce the resistive switching characteristics. The resistance ratios of high resistance state to low resistance state were in the range of 3–4 orders of magnitude within 100cycles of test. It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Poole-Frenkel emission, respectively.

Non-Volatile Resistive Switching in Graphene Oxide Thin Films

“…Most materials, for example, NiO, TiO 2 , ZnO, CuO, and SrTiO 3 etc. Do et al, 2008;Chang et al, 2008;Fujiwara et al, 2008;Oligschlaeger et al, 2006), have already been reported to be in need of Forming process. It is necessary to find some solutions to overcome this difficulty.…”

“…The reading of resistance states is nondestructive, and the memory devices can be operated without transistors in every cell (Lee et al, 2007;Waser & Aono, 2007), thus making a cross-bar structure feasible. A large variety of solid-state materials have been found to show these resistive switching characteristics, including solid electrolytes such as GeSe and Ag 2 S (Waser & Aono, 2007), perovskites such as SrZrO 3 (Beck et al, 2000), Pr 0.7 Ca 0.3 MnO 3 (Liu et al, 2000;Odagawa et al, 2004;Liao et al, 2009), and BiFeO 3 Yin et al, 2010;, binary transition metal oxides such as NiO (Seo et al, 2004;Kim et al, 2006;Son & Shin, 2008), TiO 2 Jeong et al, 2009;Kwon et al, 2010), ZrO 2 (Wu et al, 2007;Guan et al, 2008;Liu et al, 2009), and ZnO (Chang et al, 2008;Kim et al, 2009;, organic materials (Stewart et al, 2004), amorphous silicon (a-Si) (Jo and Lu, 2008;, and amorphous carbon (a-C) (Sinitskii & Tour, 2009;Zhuge et al, 2010). In last decades, carbon-based materials have been studied intensively as a potential candidate to overcome the scientific and technological limitations of traditional semiconductor devices (Rueckes et al, 2000;Novoselov et al, 2004;Avouris et al, 2007).…”

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

“…However, several reports have shown that the operation voltages are slightly higher and devices need a forming process in the initial state [7,14] . In this letter, ZnO-based memory devices with Ag electrode were fabricated by radio frequency (RF) magnetron sputtering, and the resistive switching properties were investigated.…”

“…The devices showed the bipolar resistive switching behavior with operation voltage of less than 1 V and operating current of less than 25 mA, which are significantly lower than the results of Refs. [14,15]. The non-electroforming process was obtained in our devices, which is suitable for high-density ReRAM device application.…”

Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2

“…In recent years, resistive switching phenomena have been widely observed in transition metal oxides such as Pr 0.7 Ca 0.3 MnO 3 [1], SrTiO 3 [2], NiO [3], TiO 2 [4], Cu 2 O [5], ZnO [6], HfO 2 [7], ZrO 2 [8], etc.…”