Unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices

Hu, Yunong; Tam, Man Chun; Wasilewski, Z. R.

doi:10.1116/1.5088974

Cited by 3 publications

(1 citation statement)

References 29 publications

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“…However, atomic diffusion is prone to occur on non-common atomic interfaces. [7][8][9][10] In addition, Al-As bonds are stronger than Al-Sb bonds, which might cause As to enter the AlSb layer [11] and change the net strain in the superlattice. These issues might affect the structural quality of thick InAs/AlSb superlattices.…”

Section: Introductionmentioning

confidence: 99%

Strain compensated type II superlattices grown by molecular beam epitaxy

Ning¹,

Yu²,

Sun³

et al. 2023

Chinese Phys. B

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This work investigates a strain compensation method for the growth of complex interband cascade laser structures. For thick InAs/AlSb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the lnAs sublayer is equal to the compressive strain energy in the AlSb sublayer. For the four-constituent active region, as the compressive strain in Ga0.65In0.35Sb alloy layer is large, a tensile strain was incorporated in the chirped InAs/AlSb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of 6 μm thickness was grown on GaSb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.

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Section: Introductionmentioning

confidence: 99%

Strain compensated type II superlattices grown by molecular beam epitaxy

Ning¹,

Yu²,

Sun³

et al. 2023

Chinese Phys. B

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Random alloy thick AlGaAsSb avalanche photodiodes on InP substrates

Lee

Guo

Kodati

et al. 2022

Applied Physics Letters

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We demonstrate low noise random alloy (RA) Al0.85Ga0.15AsSb (hereafter AlGaAsSb) avalanche photodiodes (APDs) nearly lattice-matched to InP substrates. In contrast to digital alloy (DA), RAs are manufacturable due to the ease of growth. The 910 nm-thick RA AlGaAsSb was grown at a low temperature around 450 °C to mitigate phase separation by suppressing surface mobility of adatoms. The high quality of the RA AlGaAsSb material was verified by x-ray diffraction, Nomarski, and atomic force microscope images. Capacitance–voltage measurement found that the background doping concentration was 6–7 × 1014 cm−3, indicating very low impurity density in the RA AlGaAsSb material. Current–voltage measurements were carried out under dark condition and 455 nm laser illumination at room temperature. The breakdown occurs at −58 V. The dark current density at a gain of 10 was found to be 70 μA/cm2. This value is three orders of magnitude lower than previously reported DA AlAs0.56Sb0.44 APDs [Yi et al., Nat. Photonics 13, 683 (2019)], one order of magnitude lower than DA AlGaAsSb [Lee et al., Appl. Phys. Lett. 118, 081106 (2021)], and comparable to RA AlInAsSb APDs [Kodati et al., Appl. Phys. Lett. 118, 091101 (2021)]. In addition, the measured excess noise shows a low k (the ratio of impact ionization coefficients) of 0.01. These noise characteristics make the RA AlGaAsSb multiplier suitable for commercial applications, such as optical communication and LiDAR systems.

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