Uniform <i>p</i>-type doping profiles in Mg+24-implanted, rapidly annealed GaAs/AlGaAs heterostructures

A simple, readily applicable expression is derived for the effective diffusion time during the shortest possible rapid thermal processing cycle in halogen lamps heated furnaces for processing solid state devices. Calculations, using the derived expression, indicate that the shortest effective diffusion time at the maximum attained temperature is in the neighborhood of 1 s, even though there is no actual hold time at this temperature.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Uniform p-type doping profiles in Mg+24-implanted, rapidly annealed GaAs/AlGaAs heterostructures

Abstract: A flat profile with p-type doping level of 1×1019 cm−3 can be obtained up to the surface in GaAs/GaAlAs heterostructures by multienergy implantations of Mg+24 at room temperature followed by a rapid thermal anneal by halogen lamps.

Cited by 9 publications

References 6 publications

Comparison of electrical and atomic profiles of Mg24 and Zn64 implanted gaas samples and GaAs-GaAIAs heterostructures for bipolar transistor applications

Comparison of electrical and atomic profiles of Mg24 and Zn64 implanted gaas samples and GaAs-GaAIAs heterostructures for bipolar transistor applications

Fabrication and d.c. characterization of GaAlAs/GaAs double heterojunction bipolar transistors

Effective diffusion time during rapid thermal processing

Contact Info

Product

Resources

About