Uniform field emission from polycrystalline CVD-diamond films

Habermann, T.; Gohl, A.; Müller, Günter; Pupeter, N.; Piel, H.; Aschermann, B.; Raiko, V.; Spitzl, Ralf; Engemann, J.

doi:10.1109/ivmc.1996.601820

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…A connected preparation chamber separates transfer, gas exposure and heating of samples. 4,8,10 The average procedure per film was in general as follows: at ten arbitrary sites U(z), then alternating U(z) and I(E) measurements before and after I processing ͑Iϭ10 A͒ at ten other sites. 9 The FESM consists of flat ͑лр1 mm͒ and tipped W anodes ͑radii у100 nm͒, a fast high-voltage regulation ͑р35 kV͒, and a x-y-z micromanipulator ͑step width: 63.5 nm͒.…”

Section: Methodsmentioning

confidence: 99%

Modifying chemical vapor deposited diamond films for field emission displays

Habermann

Gohl

Nau

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Electron emission characteristics of boron nitride films synthesized by plasma-assisted chemical vapor deposition J.A systematic investigation of deposition parameters and post-treatments was performed for the development of field emission displays based on flat chemical vapor deposited diamond films. The lowest onset field strengths were obtained for films grown at the highest substrate temperature, highest methane content, and with negatively biased substrate. Intentionally damaging the films by implantation with 50 keV and 100 keV carbon ions as well as with 4.4 MeV silicon ions usually resulted in an enhanced field emission. The emission followed the Fowler-Nordheim law up to 0.5 mA/mm 2 , and a current carrying ability of more than 100 mA/mm 2 was detected. Considerably improved emission was achieved by short and long-term processing at higher current levels.

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Section: Methodsmentioning

confidence: 99%

Modifying chemical vapor deposited diamond films for field emission displays

Habermann

Gohl

Nau

et al. 1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…If this model is correct, one would also expect that a deposition of metal film on emitters would induce a strong decrease of b, which is contrary to T. HabermannÕs observations. 27 An important requisite for this model is the initial blocking of charge as the external field is applied to the surface. This is evidenced by the charging appearance of emitting carbon (pencil deposit) particles in C. S. AthwalÕs experiments, though …”

Section: Insulator Switching Modelmentioning

confidence: 99%

Enhanced Field Emission Studies on Niobium Surfaces Relevant to High Field Superconducting Radio-Frequency Devices

Wang¹

2002

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Enhanced field emission (EFE) presents the main impediment to higher acceleration gradients in superconducting niobium (Nb) radiofrequency cavities for particle accelerators. The strength, number and sources of EFE sites strongly depend on surface preparation and handling.The main objective of this thesis project is to systematically investigate the sources of EFE from Nb, to evaluate the best available surface preparation techniques with respect to resulting field emission, and to establish an optimized process to minimize or eliminate EFE. To achieve these goals, a scanning field emission microscope (SFEM) was designed and built as an extension to an existing commercial scanning electron microscope (SEM). In the SFEM chamber of ultra high vacuum, a sample is moved laterally in a raster pattern under a high voltage anode tip for EFE detection and localization.The sample is then transferred under vacuum to the SEM chamber equipped with an energy-dispersive x-ray spectrometer for individual emitting site characterization. Compared to other systems built for similar purposes, this apparatus has low cost and maintenance, high operational flexibility, considerably bigger scan area, as well as reliable performance. iv

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“…In this work, we report the maskless and high resolution patterning of hydrogen-terminated single crystalline diamond samples using water vapor assisted EBIE featuring sizes down to 10 nm. The samples were grown in a microwave plasma-assisted CVD reactor based on a 2.45 GHz IPLAS CYRANNUS I-6" plasma source [21]. The single-crystal, {100}-oriented diamond samples were placed on the substrate holder and the chamber was pumped down to < 10 −7 mbar.…”

Section: Introductionmentioning

confidence: 99%

Patterning of diamond with 10 nm resolution by electron-beam-induced etching

Dergianlis

Geller²,

Oing³

et al. 2019

Nanotechnology

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We report on mask-less, high resolution etching of diamond surfaces, featuring sizes down to 10 nm. We use a scanning electron microscope (SEM) together with water vapor, which was injected by a needle directly onto the sample surface. Using this versatile and low-damage technique, trenches with different depths were etched. Cross sections of each trench were obtained by focused ion beam milling and used to calculate the achieved aspect ratios. The developed technique opens up the possibility of mask-and resist-less patterning of diamond for nano-optical and electronic applications.

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Uniform field emission from polycrystalline CVD-diamond films

Cited by 5 publications

References 11 publications

Modifying chemical vapor deposited diamond films for field emission displays

Modifying chemical vapor deposited diamond films for field emission displays

Enhanced Field Emission Studies on Niobium Surfaces Relevant to High Field Superconducting Radio-Frequency Devices

Patterning of diamond with 10 nm resolution by electron-beam-induced etching

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