Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sources

Ziel, A. van der

doi:10.1109/5.4401

Cited by 275 publications

(89 citation statements)

References 53 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The dependence on the dark current, fitted quadratically in Fig. 3a, indicates that a-2, hinting to dominant volume trapping instead of a surface nature 37 . Regarding the impact on imaging, the high flicker noise for integration times in the range of 1 s is not detrimental as for most imaging applications integrations times are in the millisecond range.…”

Section: Resultsmentioning

confidence: 99%

A hybrid CMOS-imager with a solution-processable polymer as photoactive layer

et al. 2012

View full text Add to dashboard Cite

The solution-processability of organic photodetectors allows a straightforward combination with other materials, including inorganic ones, without increasing cost and process complexity significantly compared with conventional crystalline semiconductors. Although the optoelectronic performance of these organic devices does not outmatch their inorganic counterparts, there are certain applications exploiting the benefit of the solution-processability. Here we demonstrate that the small pixel fill factor of present complementary metal oxide semiconductor-imagers, decreasing the light sensitivity, can be increased up to 100% by replacing silicon photodiodes with an organic photoactive layer deposited with a simple low-cost spray-coating process. By performing a full optoelectronic characterization on this first solution-processable hybrid complementary metal oxide semiconductor-imager, including the first reported observation of different noise types in organic photodiodes, we demonstrate the suitability of this novel device for imaging. Furthermore, by integrating monolithically different organic materials to the chip, we show the cost-effective portability of the hybrid concept to different wavelength regions.

show abstract

Section: Resultsmentioning

confidence: 99%

A hybrid CMOS-imager with a solution-processable polymer as photoactive layer

et al. 2012

View full text Add to dashboard Cite

show abstract

“…Although other physical mechanisms of LFN may co-exist [109,116,117], interface traps are usually employed to understand the origin of LFN in graphene devices [61,65,102,118,119]. For instance, suspended graphene devices show a 6-12 times lower LFN than those with a SiO 2 substrate, suggesting that the traps in SiO 2 substrate contribute significantly to LFN [118].…”

Section: B Device Fluctuations From Many Interface Trapsmentioning

confidence: 99%

“…The McWhorter model views the LFN as the multi-level fluctuations caused by an ensemble of many interface traps (number >>1): each trap contributes a RTN over a wide range of  and corner f (see Figure 2a) [109,117,120,121]. The overall PSD can be integrated as [65].…”

Section: B Device Fluctuations From Many Interface Trapsmentioning

confidence: 99%

“…These two-level fluctuations belong to random telegraph noise (i.e. RTN, generation-recombination noise) [107][108][109]. It is commonly measured by sampling the current variations in the time-domain under a constant voltage bias across the channel (i.e.…”

Section: A Device Fluctuations Caused By a Single Interface Trapmentioning

confidence: 99%

“…by assuming the resistance/conductance (R/G) is independent from the bias condition [109]. The parameter A is commonly used as a measure of the LFN amplitude [61,65,115,124].…”

Section: B Device Fluctuations From Many Interface Trapsmentioning

confidence: 99%

See 2 more Smart Citations

Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications

Zhang

Duan

et al. 2013

Proc. IEEE

View full text Add to dashboard Cite

Abstract-Variability effects in graphene can result from the surrounding environment and the graphene material itself, which form a critical issue in examining the feasibility of graphene devices for large-scale production. From the reliability and yield perspective, these variabilities cause fluctuations in the device performance, which should be minimized via device engineering. From the metrology perspective, however, the variability effects can function as novel probing mechanisms, in which the 'signal fluctuations' can be useful for potential sensing applications. This paper presents an overview of the variability effects in graphene, with emphasis on their challenges and opportunities for device engineering and applications. The discussion can extend to other thin-film, nanowire and nanotube devices with similar variability issues, forming general interest in evaluating the promise of emerging technologies.

show abstract

Noise, Low‐Frequency

Händel

2005

Encyclopedia of RF and Microwave Engineering

View full text Add to dashboard Cite

Low‐frequency noise, containing fluctuations of current or voltage with frequency components below 10 kHz, is mainly fundamental 1/ f noise and sometimes nonfundamental 1/ f noise. In addition, shot noise, generation–recombination (GR) noise, and thermal noise, which are important at higher frequencies, also extend to the low‐frequency domain. All theses forms of electronic noise, are characterized by the mean squared current fluctuation (( δI ) 2 ) [or (( δV ) 2 ≡RMS δV ) 2 for voltage], measured in series with (or across) the device or sample under test, when a constant voltage (current) is applied, except for thermal noise, which is present even in thermal equilibrium, with no bias applied.

show abstract

Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sources

Cited by 275 publications

References 53 publications

A hybrid CMOS-imager with a solution-processable polymer as photoactive layer

A hybrid CMOS-imager with a solution-processable polymer as photoactive layer

Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications

Noise, Low‐Frequency

Contact Info

Product

Resources

About