Unified model for short-channel poly-Si TFTs

Iñı́guez, Benjamı́n; Xu, Zheng; Fjeldly, Tor A.; Shur, M. S.

doi:10.1016/s0038-1101(99)00142-2

Cited by 61 publications

(28 citation statements)

References 14 publications

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“…The minimum is solved by (12) when V gs ¼ V th . To roughly estimate the maximum, we solve it using (21) by setting N D % 0 and V gs approaching its maximum, where the deep-state density in (16) is neglected and the solution of (21) can be obtained without using w gb00 . It can be clearly seen from Fig.…”

Section: Model Verification and Discussionmentioning

confidence: 99%

Explicit calculation for grain boundary barrier height in polysilicon TFTs based on quasi-two-dimensional approach

Deng

Huang

2013

Solid-State Electronics

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Section: Model Verification and Discussionmentioning

confidence: 99%

Explicit calculation for grain boundary barrier height in polysilicon TFTs based on quasi-two-dimensional approach

Deng

Huang

2013

Solid-State Electronics

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“…The drain to source current, used in the RPI V1 and V2 models [4][5][6], is given by ( I a ×I sub I a +I sub + I leak )×(1+ kink). When the gate bias is greater than the threshold voltage, I a becomes significant.…”

Section: The Parameter Extraction Techniquementioning

confidence: 99%

“…Excimer laser annealing technique has recently been proposed in the fabrication of LTPS TFTs, in particular for active matrix liquid crystal display (AMLCD) [1][2][3][4][5][6][7] and system on panel (SOP). Equivalent circuit models, such as RPI V1 and V2 models [4][5][6] are important for designing the embedded driving circuits in LCDs with laser annealed LTPS TFTs.…”

Section: Introductionmentioning

confidence: 99%

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A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors

2004

J Comput Electron

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A unified physical-based model parameter extraction technique for excimer laser annealed lower temperature polycrystalline silicon (LTPS) complementary thin film transistors (TFTs) is for the first time proposed. For two well-known compact models of LTPS TFT, Rensselaer Polytechnic Institute (RPI) V1 and V2 models, our approach sequentially optimizes the model parameters in the regions of linear, subthreshold, saturation, and leakage. Compared with the measured results, the extracted I D − V G , I D − V D , transconductance, and output conductance are within 3% of accuracy. The agreement with the experimental data is excellent for the n-and p-type LTPS TFTs with different length and width. This extraction technique bridges the fabrication of LTPS TFTs and the design of complementary system on panel circuits.

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“…The luminance model for each pixel in [13] has a quadruple relationship between the input gray and output luminance. However, this model is inaccurate because the drain current of the TFT is not quadrupled according to the input gray level [16,17]; moreover, the luminance of the OLED according to the drain current of the TFT is not linear. To reflect more realistic optoelectronic characteristics of AMOLED pixels, a compensation method with a modified model [14] is reported.…”

Section: Introductionmentioning

confidence: 99%

A Luminance Compensation Method Using Optical Sensors with Optimized Memory Size for High Image Quality AMOLED Displays

Hong

Kwon

2016

Journal of the Optical Society of Korea

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This paper proposes a luminance compensation method using optical sensors to achieve high luminance uniformity of active matrix organic light-emitting diode (AMOLED) displays. The proposed method compensates for the non-uniformity of luminance by capturing the luminance of entire pixels and extracting the characteristic parameters. Data modulation using the extracted characteristic parameters is performed to improve luminance uniformity. In addition, memory size is optimized by selecting an optimal bit depth of the extracted characteristic parameters according to the trade-off between the required memory size and luminance uniformity. To verify the proposed compensation method with the optimized memory size, a 40-inch 1920×1080 AMOLED display with a target maximum luminance of 350 cd/m 2 is used. The proposed compensation method considering a 4σ range of luminance reduces luminance error from ± 38.64%, ± 36.32%, and ± 43.12% to ± 2.68%, ± 2.64%, and ± 2.76% for red, green, and blue colors, respectively. The optimal bit depth of each characteristic parameter is 6-bit and the total required memory size to achieve high luminance uniformity is 74.6 Mbits.

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Unified model for short-channel poly-Si TFTs

Cited by 61 publications

References 14 publications

Explicit calculation for grain boundary barrier height in polysilicon TFTs based on quasi-two-dimensional approach

Explicit calculation for grain boundary barrier height in polysilicon TFTs based on quasi-two-dimensional approach

A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors

A Luminance Compensation Method Using Optical Sensors with Optimized Memory Size for High Image Quality AMOLED Displays

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