Unified Analytical Model for SOI LDMOS With Electric Field Modulation

Duan, Baoxing; Xing, Jingyu; Dong, Ziming; Yang, Yintang

doi:10.1109/jeds.2020.3006293

Cited by 7 publications

(2 citation statements)

References 26 publications

(53 reference statements)

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“…With a reverse bias applied to the device, the completely depleted drift region is divided up within the variable-k I buried layer. The potential distribution function ϕ i (x, y) in each drift region satisfies the two-dimensional Poisson equation [20,21]…”

Section: Resultsmentioning

confidence: 99%

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

et al. 2022

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A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that, under the same breakdown voltage (BV) condition, allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers. Reducing their numbers helps in fast-switching. Furthermore, the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel. The simulation results show that the BV of the proposed LIGBT is increased by 113% compared with the conventional SOI LIGBT of the same length L D. Contrastingly, the length of the drift region of the proposed device (11.2 μm) is about one third that of a traditional device (33 μm) with the same BV of 141 V. Therefore, the turn-off loss (E OFF) of the CDBL SOI LIGBT is decreased by 88.7% compared with a conventional SOI LIGBT when the forward voltage drop (V F) is 1.64 V. Moreover, the short-circuit failure time of the proposed device is 45% longer than that of the conventional SOI LIGBT. Therefor, the proposed CDBL SOI LIGBT exhibits a better V F–E OFF tradeoff and an improved short-circuit robustness.

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Section: Resultsmentioning

confidence: 99%

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

et al. 2022

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“…Due to the advantages of silicon technology, including low current leakage, high speed, high gain, and low power losses, the LDD-SOI structure is used as one of the high-efficiency structures in high-voltage applications. [6][7][8] LDD-SOI is designed to achieve high breakdown voltage. The structures designed with SOI technology have advantages and disadvantages.…”

Section: Introductionmentioning

confidence: 99%

Raised breakdown voltage in a high‐voltage recessed LDD‐SOI by submerged SI3N4

Daneshpajooh

Anvarifard

2022

Int J Numerical Modelling

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A new structure of metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) with lateral double‐diffused MOSFET was introduced based on the silicon‐on‐insulator lightly doped‐drain metal‐oxide‐semiconductor field‐effect‐transistor (SOI‐LDD MOSFET) technology, called recessed silicon nitride lateral‐double diffused silicon‐on‐insulator (RS‐LDD SOI). In the proposed structure, a recession was created on the buried oxide layer and filled with a silicon nitride (SI3N4) layer. Silicon nitride makes the electric field distribution more uniform by modulating the electric field in the drift zone, thereby increasing the breakdown voltage of the proposed structure. The simulation results performed with ATLAS software demonstrated the performance improvement of the proposed structure. Increasing the breakdown voltage by 31% compared to the conventional structure was one of the most important achievements of this work. Also, design considerations were made on the submerged part in the buried oxide, which can be an excellent guide to achieving the optimal performance of the proposed structure.

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Successful electric field modulation to enhance DC and RF features in SOI LDMOS transistors using a β-Ga2O3 film

Sohrabi-Movahed,

Orouji

2024

J Mater Sci: Mater Electron

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Unified Analytical Model for SOI LDMOS With Electric Field Modulation

Cited by 7 publications

References 26 publications

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

Raised breakdown voltage in a high‐voltage recessed LDD‐SOI by submerged SI3N4

Successful electric field modulation to enhance DC and RF features in SOI LDMOS transistors using a β-Ga2O3 film

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