2018
DOI: 10.1088/1361-6463/aaa4a1
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Uniaxial magnetic anisotropy of tetragonal FeCoV and FeCoVC films

Abstract: The tetragonal crystalline structure and magnetic properties of MgO/Rh/(Fe1−xCox)0.9V0.1 and MgO/Rh/(Fe1−xCox)0.9V0.05C0.05 films (0.4 x 0.7, thickness t  =  2–50 nm) were studied. For both the systems, the films with t  =  5 nm showed a tetragonal distortion (c/a) of ~1.15 at x  =  0.6. Furthermore, in the case of (Fe1−xCox)0.9V0.05C0.05, the films showed a c/a value of ~1.06 even at t  =  50 nm. The magnetic anisotropy induced by the tetragonal distortion of films became 1.4  ×  107 erg cm−3 for (Fe1−xCox)… Show more

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Cited by 9 publications
(5 citation statements)
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References 31 publications
(62 reference statements)
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“…Rh was selected as the buffer layer material because it exhibited the lattice mismatch ( a FeCo − a Rh /)/ a FeCo ≈ 0.05–0.07 across the bcc–fcc FeCo structures, which was considered suitable for epitaxial growth. According to the results of our previous studies 27 , the addition of 10 at.% V to FeCo films produced the maximum value of K u .…”
Section: Structural Bcc To Fcc Transformation Of Feco Due To Vn Additionmentioning
confidence: 67%
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“…Rh was selected as the buffer layer material because it exhibited the lattice mismatch ( a FeCo − a Rh /)/ a FeCo ≈ 0.05–0.07 across the bcc–fcc FeCo structures, which was considered suitable for epitaxial growth. According to the results of our previous studies 27 , the addition of 10 at.% V to FeCo films produced the maximum value of K u .…”
Section: Structural Bcc To Fcc Transformation Of Feco Due To Vn Additionmentioning
confidence: 67%
“…In our previous study 27 , we focused on the use of vanadium as the third additive element because of its ability to form a bcc solid solution around Fe 50 Co 50 clusters, which was subsequently transformed into the fcc phase with an increase in the V content. A stabilisation of the bct phase was expected to occur at the boundary between the bcc and fcc phases.…”
Section: Introductionmentioning
confidence: 99%
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“…Before bulk-forming (using method (ii)), FeCo films with added α (such as Al, Ti, and V) and β (such as C and N) elements were epitaxially grown on a Rh buffer layer. In previous studies, this resulted in the successful formation of a bct structure 7,[9][10][11][12][13] . Further, a combination of α = V and β = N proved to be the most effective in forming a bct structure with c/a ≈ 1.2 in thin (t ≤ 5 nm) and thick (t = 100 nm) films, and a large K u of 1 MJ/m 3 was obtained 9,[12][13][14] .…”
mentioning
confidence: 95%