Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation

Belmehdi, Yassine; Azzopardi, Stéphane; Benmansour, Adel; Delétage, Jean-Yves; Woirgard, Eric

doi:10.1016/j.microrel.2009.06.037

Cited by 3 publications

(4 citation statements)

References 12 publications

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“…This is certainly due to the test set-up configuration leading to an increase of the electrode resistance. The effect of the mechanical stress on the saturation current is directly linked to the strong dependency of the electron mobility to the mechanical stress as it has been already investigated in [2,3,4].…”

Section: Static Operating Configurations Simulation Resultsmentioning

confidence: 99%

“…VJn =qR net +q- (3) at -op -VJp =qR net + q - (4) at The continuity equations for the electron and hole respectively are:…”

Section: Anmentioning

confidence: 99%

“…It is well known that temperature IS an important parameter and modifies considerably the silicon device behavior. Additionally, literature shows that the mechanical stress also has an impact on the silicone device behavior [2,3,4].…”

Section: Introductionmentioning

confidence: 99%

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A correlation between thermo-mechanical finite elements tool with electro-thermal finite elements tool: towards an electro-mechanical finite elements modeling for IGBT used in power assemblies

Belmehdi

Azzopardi

Woirgard

et al. 2010

2010 11th International Thermal, Mechanical &Amp; Multi-Physics Simulation, and Experiments in Microelectronics and Microsystem

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Our objective is to establish a connection between finite elements mechanical simulations using ANSYS software applied on a power module including a silicone die with finite elements electrical simulations using TCAD SENTAURUS software applied on a silicone power transistor, such as a Planar Gate Punch Through Insulated Gate Bipolar Transistor (IGBT). In this paper, the thermo-mechanical finite elements software is used to obtained the mechanical stress distribution within the silicone die under the four points bending configuration. Then, the mechanical stress is implemented in the semiconductor device simulator to obtain three static configurations (output characteristics, forward transfer and breakdown voltage). Simulation results show the same tendency' as experiments and illustrate that whereas the mechanical stress has low effect on breakdown voltage, the forward current as well as the transconductance are strongly affected by external mechanical stress depending on its level, direction and nature (compressiveor tensile).

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Section: Static Operating Configurations Simulation Resultsmentioning

confidence: 99%

“…VJn =qR net +q- (3) at -op -VJp =qR net + q - (4) at The continuity equations for the electron and hole respectively are:…”

Section: Anmentioning

confidence: 99%

See 1 more Smart Citation

A correlation between thermo-mechanical finite elements tool with electro-thermal finite elements tool: towards an electro-mechanical finite elements modeling for IGBT used in power assemblies

Belmehdi

Azzopardi

Woirgard

et al. 2010

2010 11th International Thermal, Mechanical &Amp; Multi-Physics Simulation, and Experiments in Microelectronics and Microsystem

Self Cite

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“…Potentially, Buck-Boost DC-DC transformerless converters can face short-circuit failure modes under certain conditions. Sources [21][22][23][24][25][26] offer significant information in this direction as follows: IGBT structural behavior under short-circuit [21]; breakdown and thermal runaway mechanisms leading to destructive failure [22]; damages from electrostatic discharge [23]; IGBTs' mechanical stress under short-circuit conditions [24]; turn-off failure mechanism [25]; robustness of IGBT modules during turn-off commutation.…”

Section: Introductionmentioning

confidence: 99%

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

et al. 2020

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A transformer-less Buck-Boost direct current–direct current (DC–DC) converter in use for the fast charge of electric vehicles, based on powerful high-voltage isolated gate bipolar transistor (IGBT) modules is analyzed, designed and experimentally verified. The main advantages of this topology are: simple structure on the converter’s power stage; a wide range of the output voltage, capable of supporting contemporary vehicles’ on-board battery packs; efficiency; and power density accepted to be high enough for such a class of hard-switched converters. A precise estimation of the loss, dissipated in the converter’s basic modes of operation Buck, Boost, and Buck-Boost is presented. The analysis shows an approach of loss minimization, based on switching frequency reduction during the Buck-Boost operation mode. Such a technique guarantees stable thermal characteristics during the entire operation, i.e., battery charge cycle. As the Buck-Boost mode takes place when Buck and Boost modes cannot support the output voltage, operating as a combination of them, it can be considered as critically dependent on the characteristics of the semiconductors. With this, the necessary duty cycle and voltage range, determined with respect to the input-output voltages and power losses, require an additional study to be conducted. Additionally, the tolerance of the applied switching frequencies for the most versatile silicon-based powerful IGBT modules is analyzed and experimentally verified. Finally, several important characteristics, such as transients during switch-on and switch-off, IGBTs’ voltage tails, critical duty cycles, etc., are depicted experimentally with oscillograms, obtained by an experimental model.

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An Electro-thermo-mechanical Model Basing on Experimental Results for Press-pack IGBT Including MOS Side Two-Dimensional Effects

Cui

Tang

et al. 2019

2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation

Cited by 3 publications

References 12 publications

A correlation between thermo-mechanical finite elements tool with electro-thermal finite elements tool: towards an electro-mechanical finite elements modeling for IGBT used in power assemblies

A correlation between thermo-mechanical finite elements tool with electro-thermal finite elements tool: towards an electro-mechanical finite elements modeling for IGBT used in power assemblies

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

An Electro-thermo-mechanical Model Basing on Experimental Results for Press-pack IGBT Including MOS Side Two-Dimensional Effects

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