Unfolding an Elusive Area-Selective Deposition Process: Atomic Layer Deposition of TiO2 and TiON on SiN vs SiO2
Alfredo Mameli,
Kanda Tapily,
Jie Shen
et al.
Abstract:Area-selective atomic layer deposition (AS-ALD) processes for TiO 2 and TiON on SiN as the growth area vs SiO 2 as the nongrowth area are demonstrated on patterns created by stateof-the-art 300 mm semiconductor wafer fabrication. The processes consist of an in situ CF 4 /N 2 plasma etching step that has the dual role of removing the SiN native oxide and passivating the SiO 2 surface with fluorinated species, thus rendering the latter surface less reactive toward titanium tetrachloride (TiCl 4 ) precursor. Addi… Show more
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