Undoped p-type GaN1–xSbx alloys: Effects of annealing

Segercrantz, Natalie; Baumgartner, Y.; Min, Ting; Yu, K. M.; Mao, Samuel S.; Sarney, Wendy L.; Svensson, Stefan P.; Walukiewicz, W.

doi:10.1063/1.4972559

Cited by 7 publications

(5 citation statements)

References 22 publications

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“…The n-to-p conversion by incorporating Sb is special. Limited data were reported for the group V anion instead of cation doping on GaN [18][19][20][21][22]. Our work can have its contribution on the HMA field for further development.…”

Section: Resultsmentioning

confidence: 92%

Reactively Sputtered Sb-GaN Films and its Hetero-Junction Diode: The Exploration of the n-to-p Transition

et al. 2020

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Sb anion-substituted gallium nitride films were fabricated by radio frequency reactive sputtering with single Sb-containing cermet targets with different Sb contents under Ar/N2 atmosphere. n-type GaN films with electron concentration of (1.40 ± 0.1) × 1017 cm−3 inverted to p-type Sb-GaN with hole concentration of (5.50 ± 0.3) × 1017 cm−3. The bandgap energy of Sb anion-added Sb-GaN films decreased from 3.20 to 2.72 eV with increasing Sb concentration. The formation of p-type Sb-GaN is attributed to the formation of Ga vacancy at higher Sb concentration. The coexistence of Sb at the Ga cation site and N anion site is an interesting and important result, as GaNSb had been well developed for highly mismatched alloys. The hetero-junction with p-type Sb-GaN/n-Si diodes was all formed by radio frequency (RF) reactive sputtering technology. The electrical characteristics of Sb-GaN diode devices were investigated from −20 to 20 V at room temperature (RT).

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Section: Resultsmentioning

confidence: 92%

Reactively Sputtered Sb-GaN Films and its Hetero-Junction Diode: The Exploration of the n-to-p Transition

et al. 2020

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“…Processes of MBE growth with As [42][43][44][45] and Sb [46,47] as surfactants were performed to increase the quality of GaN films. Furthermore, as incorporation into GaN changes the electronic properties of the host [48][49][50][51], antimony was also used to modify the properties of GaN [52][53][54] and to form GaNSb films with a p-type character [55,56]. The interaction of As and Sb with GaN, as well as the morphological changes caused by postdeposition annealing, have been studied [57,58], where it was shown that thermal treatment leads to easy desorption of the films, but some adsorbated atoms remain on the surface, modifying its properties.…”

Section: Introductionmentioning

confidence: 99%

Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Grodzicki

2021

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In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite form, (0001) oriented, are summarized. Thin films of several elements—manganese, nickel, palladium, arsenic, and antimony—were formed by the physical vapor deposition method. The results of the bare surfaces, as well as the thin film/GaN(0001) phase boundaries presented, were characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information on the electronic properties of GaN(0001) surfaces are shown. Different behaviors of the thin films, after postdeposition annealing in ultrahigh vacuum conditions such as surface alloying and subsurface dissolving and desorbing, were found. The metal films formed surface alloys with gallium (MnGa, NiGa, PdGa), while the semimetal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate could react with it, modifying the surface properties of GaN(0001).

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“…It has been shown previously that alloying of GaN with GaSb can produce a p-type GaNSb. 43 This effect was explained by a rapid upward shift of the VBM upon introduction of Sb into GaN. Since as we have shown in the Sec.…”

Section: Electrical Properties Of Zno 1−x Te X Hmasmentioning

confidence: 80%

“…This is in contrast to GaNSb alloys where p-type conductivity was achieved when both VBM and CBM were separated by about 0.5 eV from E FS . 43…”

Section: Journal Of Applied Physicsmentioning

confidence: 99%

ZnO1−xTex highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure

Min

Jaquez

et al. 2019

Journal of Applied Physics

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Undoped p-type GaN1–xSbx alloys: Effects of annealing

Cited by 7 publications

References 22 publications

Reactively Sputtered Sb-GaN Films and its Hetero-Junction Diode: The Exploration of the n-to-p Transition

Reactively Sputtered Sb-GaN Films and its Hetero-Junction Diode: The Exploration of the n-to-p Transition

Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

ZnO1−xTex highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure

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