The ability to understand the role of defects in nanostructures, such as carbon nanotubes (CNTs), is crucial for determining their utility in many applications. We analyze the improvement in electrochemical performance of multi-walled CNT arrays that were exposed to argon and hydrogen based plasmas, where it was hypothesized that locally charged defects could be created through exposure to ions in the plasma. Such defects would influence the graphitic structure and were monitored through Raman spectroscopy. Cyclic voltammetry and associated electrochemical techniques were employed to infer the effects of plasma exposure on electrochemical charge transfer. It was seen that the effective area of charge transfer could be reproducibly increased through argon plasma exposure by ∼100%, while exposure to hydrogen based plasmas resulted in decrease in the effective area by nearly 60%, under the investigated conditions. Our experiments indicate enhanced faradaic currents, involving non-planar diffusion processes of the electroactive species, with implications for enhanced charge and energy storage.The need for high energy density materials continually increases with the proliferation of portable electronics and energy harvesting devices. In this article, we present principles and methodologies, through which the energy density of electrochemical devices can be further enhanced, and thus applicable to the design of new generations of battery 1,2 and capacitor 3-5 architectures. Broadly, our study involves the purposeful addition of defects, which promote electrochemical reactions by increasing the effective area for charge transfer. The layered structure of graphite/multi-walled carbon nanotubes (CNTs), constituted of edge and basal planes, provides an excellent basis for such studies as it is well known 6,7 that edge plane like defects have a electrochemical rate constant of up to five orders of magnitude 8 greater than that of the latter constituent and that their ratio could be manipulated for altering electron transfer kinetics. We indicate that the implications may be more profound in terms of charge configuration and storage, e.g., dangling bonds resident on edge plane like defects may serve for enhancing the charge and energy density. We then explore themes where the fractions of defects resembling the edge plane may be created and relatively easily tuned. CNT arrays were found particularly appealing as they afford a large area over which such effects can be monitored and averaged.For this purpose, multi-walled CNT arrays were synthesized on electrically conducting silicon wafers through thermal chemical vapor deposition (CVD). The CNTs were subsequently exposed to argon and hydrogen based plasmas, where it was hypothesized that locally charged defects could be created through exposure to ions in the plasma. Such defects would influence the graphitic structure, 9 e.g., through electron and phonon renormalization. 10 A manifestation of charge transfer related to the CNTs was observed in Raman spectroscopy, through sh...