Understanding the Role of CdTe in Polycrystalline CdSexTe1–x/CdTe‐Graded Bilayer Photovoltaic Devices

Shah, Akash; Pandey, Ramesh; Nicholson, Anthony P.; Lustig, Zach; Abbas, Ali; Danielson, Adam; Walls, John M.; Munshi, Amit; Sampath, Walajabad S.

doi:10.1002/solr.202100523

Cited by 10 publications

(2 citation statements)

References 25 publications

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“…In order to overcome the factors limiting the performance of the solar cells with Cd(Se,Te) interlayer, the studies were concentrated on the optimization of fabrication conditions such as their thickness, the effect of Cu doping on them, minority carrier lifetime, defect structure, CdCl 2 treatment, etc [9][10][11][12][13][14][15]. Among the existing conditions of fabrication, substrate temperature (ST) is an important parameter because it directly affects phase formation, grain size and conductivity of the CdSe and/or CdTe films as well as the quality of the interface at the CdSe/CdTe or Cd(Se,Te)/CdTe stacks [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Impact of CdSeTe and CdSe film deposition parameter on the properties of CdSeTe/CdTe absorber structure for solar cell applications

Çiriş,

Atasoy,

Tomakin

et al. 2024

Semicond. Sci. Technol.

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In this study, the effect of depositing CdSeTe and CdTe layers at different substrate temperatures by evaporation in vacuum on the properties of the CdSeTe/CdTe stacks was investigated. First, CdSeTe layers in stack structure were grown at substrate temperatures of 150, 200 and 250°C and then CdTe layers on the CdSeTe produced with the optimum temperature were coated at substrate temperatures of 150, 200 and 250°C. The employing of substrate temperatures up to 150°C on both CdSeTe and CdTe films in CdSeTe/CdTe stacks demonstrated the presence of Te and/or oxide phases as well as the alloying, while more stable phase structures at higher temperatures. In the CdSeTe/CdTe stack, the increase in substrate temperature of CdSeTe promoted the alloying, while it weakened the alloy in which was applied in CdTe. It was concluded that under the applied experimental conditions, substrate temperatures of 250°C and 200°C with the graded alloying structure, suitable absorption sites, more homogeneous surface morphology for potential solar cell applications would be more suitable for CdSeTe and CdTe, respectively. As a result, the application of substrate temperature to CdSeTe or CdTe in the stacks can be used as a tool to control the properties of the stack structure.

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Section: Introductionmentioning

confidence: 99%

Impact of CdSeTe and CdSe film deposition parameter on the properties of CdSeTe/CdTe absorber structure for solar cell applications

Çiriş,

Atasoy,

Tomakin

et al. 2024

Semicond. Sci. Technol.

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“…MZO and CdSe x Te 1-x (CdSeTe) improve the carrier collection at short and long wavelength, respectively [6] maximizing the short-circuit current density (J SC ), currently exceeding 30 mA/cm 2 [9]. The graded absorber bilayer, CdSe x Te 1-x /CdTe, is necessary to maintain simultaneously high values of open-circuit voltage and short-circuit current [10]. Despite this improvements the open circuit voltage remain below 900 mV far from the detailed-balance value of 1.156 V [11].…”

Section: Introductionmentioning

confidence: 99%

Front interface defect signature and benefits of CdSeTe thickness and band gap in CdSeTe/CdTe graded solar cell

Filipe,

Chenene

2023

Preprint

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Thin film solar cells based on CdTe absorber suffer from abnormal current density – voltage (J-V) shapes and open‑circuit voltage deficit due to suboptimum device architecture, non-optimal back contact and bulk absorber limiting factors, such as low doping density, grain boundary and low carrier lifetime. In this study, we investigate the role of window/absorber interface defects properties in the J‑V curve shape and the combined effect of CdSexTe1-x thickness and band gap on the device performance using SCAPS-1D. For donor-type interface defects no abnormalities are reported in the J-V curve shape of the device. Acceptor-like defects show strong effect on the J-V shape and two types of anomalies in the J-V curve are reported, hysteresis and s-kink. Those abnormalities are eliminated when the defects concentration at the front interface is bellow or equal to. The simulations also point out the optimum CdSeTe thickness and band gap to achieve simultaneously high values of open-circuit voltage and short-circuit density, as well as, high conversion efficiency and fill factor. We demonstrate that further device structural optimization is required in MZO/CdSeTe/CdTe solar cell.

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Investigation of Sub‐Bandgap Emission and Unexpected n‐Type Behavior in Undoped Polycrystalline CdSe_xTe_1‐x

McGott,

Johnston,

Jiang

et al. 2024

Advanced Science

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Se alloying has enabled significantly higher carrier lifetimes and photocurrents in CdTe solar cells, but these benefits can be highly dependent on CdSexTe1‐x processing. This work evaluates the optoelectronic, chemical, and electronic properties of thick (3 µm) undoped CdSexTe1‐x of uniform composition and varied processing conditions (CdSexTe1‐x evaporation rate, CdCl2 anneal, Se content) chosen to reflect various standard device processing conditions. Sub‐bandgap defect emission is observed, which increased as Se content increased and with “GrV‐optimized CdCl2” (i.e., CdCl2 anneal conditions used for group‐V‐doped devices). Low carrier lifetime is found for GrV‐optimized CdCl2, slow CdSexTe1‐x deposition, and low‐Se films. Interestingly, all films (including CdTe control) exhibited n‐type behavior, where electron density increased with Se up to an estimated ≈1017 cm−3. This behavior appears to originate during the CdCl2 anneal, possibly from Se diffusion leading to anion vacancy (e.g., VSe, VTe) and ClTe generation.

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Understanding the Role of CdTe in Polycrystalline CdSe_xTe_1–x/CdTe‐Graded Bilayer Photovoltaic Devices

Cited by 10 publications

References 25 publications

Impact of CdSeTe and CdSe film deposition parameter on the properties of CdSeTe/CdTe absorber structure for solar cell applications

Impact of CdSeTe and CdSe film deposition parameter on the properties of CdSeTe/CdTe absorber structure for solar cell applications

Front interface defect signature and benefits of CdSeTe thickness and band gap in CdSeTe/CdTe graded solar cell

Investigation of Sub‐Bandgap Emission and Unexpected n‐Type Behavior in Undoped Polycrystalline CdSe_xTe_1‐x

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Understanding the Role of CdTe in Polycrystalline CdSexTe1–x/CdTe‐Graded Bilayer Photovoltaic Devices

Cited by 10 publications

References 25 publications

Impact of CdSeTe and CdSe film deposition parameter on the properties of CdSeTe/CdTe absorber structure for solar cell applications

Impact of CdSeTe and CdSe film deposition parameter on the properties of CdSeTe/CdTe absorber structure for solar cell applications

Front interface defect signature and benefits of CdSeTe thickness and band gap in CdSeTe/CdTe graded solar cell

Investigation of Sub‐Bandgap Emission and Unexpected n‐Type Behavior in Undoped Polycrystalline CdSexTe1‐x

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Understanding the Role of CdTe in Polycrystalline CdSe_xTe_1–x/CdTe‐Graded Bilayer Photovoltaic Devices

Investigation of Sub‐Bandgap Emission and Unexpected n‐Type Behavior in Undoped Polycrystalline CdSe_xTe_1‐x