Understanding the origin of broad-band emission in CH₃NH₃PbBr₃

Abstract

Broad-band emissions related to self-trapped excitons in the sub-bandgap region (600–800 nm) in organic–inorganic hybrid perovskites can be controlled using suitable synthesis procedure.

High‐Tc 1D Phase‐Transition Semiconductor Photoluminescent Material with Broadband Emission

“…Figure 5c shows that the emission from point A to point B is located in the orange pink region, and the chromaticity coordinates (CIE) are A (0.1738, 0.0049) and B (0.5281, 0.4711), which are consistent with the orange pink light observed by eyes. In addition, compound 1 is a strong electron phonon coupling soft material with broadband emission (FWHM = 140 nm) and large Stokes shift (237 nm), which fully conforms to the characteristics of STE emission phenomenon, [62] that is, it usually occurs in soft materials with strong electron phonon coupling, and emits photons with wide spectrum and large Stokes shift. [63] The larger Stokes displacement has the advantages of low background interference, less damage to biological samples, strong sample penetration, and high detection sensitivity, expanding the application scope of compound 1.…”

Recent Developments on the Properties of Chalcogenide Thin Films

“…Sizes of the halide anions (X = I, Br, Cl) affected the electronic band structure of the system. Large anion (iodine based materials) showed a smaller bandgap and corresponded the absorption edge at 780 nm; whereas substituting iodine with smaller bromine (chlorine) anion shifts the absorption edge to 535 nm (408 nm) for MA + based perovskite system [68]. A systematic blue shift of the PL emission peak is observed with the increase of Br concentration in mixed halide perovskite of the type MAPb(I 1−x Br x ) 3 .…”

A study on theoretical models for investigating time-resolved photoluminescence in halide perovskites

“…The non-radiative recombination paths mainly include the defect assisted recombination, interface state recombination, and so on. [60][61][62][63][64][65][66][67][68][69] Furthermore, it is argued that the existence of non-radiative recombinations in halide perovskites caused by the poor film quality greatly reduces their photoelectric performance. Carriers are captured by internal deep defect state levels and cannot be extracted effectively due to the mismatched interfacial energy level arrangement, leading to the loss of energy.…”