Despite having outstanding electrical properties, graphene is unsuitable for optical devices because of its zero band gap. Here, we report two-dimensional excitonic photoluminescence (PL) from graphene grown on Cu(111) surface, which shows an unexpected remarkably sharp and strong emission near 3.16 eV (full-width at half-maximum ≤ 3meV) and multiple emissions around 3.18 eV. As temperature increases, these emissions blue-shift, showing the characteristic negative thermal coefficient of graphene. Observed PLs originate from significantly suppressed dispersion of excited electrons in graphene caused by hybridization of graphene π and Cu d orbitals of the 1st and 2nd Cu layers at a shifted saddle point 0.525(M+K) of Brillouin zone. This finding provides a new pathway to engineering novel optoelectronic graphene devices, whilst maintaining the outstanding electrical properties of graphene.Graphene has been widely studied due to its remarkable electronic properties [1][2][3][4][5][6]. Nevertheless, owing to zero band gap, graphene has not been considered as useful optical materials [6][7][8][9][10][11]. Excited electron and hole pairs are easily screened by free electrons in metals. This makes the luminescence efficiency of metals very low so that only the band to band transition may be signified, as observed in noble metals [11]. Surprisingly, excitonic features for metallic carbon nanotubes were predicted theoretically and observed in optical absorption experiments [12,13], leading to possible enhancements in luminescence. These were explained by the fact that screening is not effective in one-dimensional metals. For 2-dimensional (2D) materials having intriguing 2D electronic features near the Fermi level like graphene, sharp luminescence was not obtainable. While an exciton in 2D semi-metallic graphene was predicted [14,15], no direct experimental evidence has been reported despite the existence of some signatures [16]. Here we show the photoluminescence (PL) of graphene on Cu, which reveals the presence of an exciton in the quasi 2D system, where Cu is unique in the sense that it interacts weakly with graphene so that the Dirac cone remains.Graphene was grown on Cu single-crystal 7×7×1 mm 3 in a hot furnace consisting of a 25 mm ID quartz tube. The Cu single-crystal disc was first placed in the center of a horizontal quartz tube mounted inside a high temperature furnace, and the tube was then evacuated, back filled with hydrogen (H 2 ) and argon (Ar), and the process was repeated three times to remove the residual air completely from the quartz tube. H 2 (100 sccm) and Ar (200 sccm) were introduced as the carrier gas, when the furnace temperature reached 1323 K. A Cu single-crystal was pre-annealed at 1323 K for 30 mins to remove the native Cu oxide layer in the H 2 and Ar atmosphere. Then, CH 4 (5 sccm) was flowed through the system. In order to know the relation of the PL with graphene, we also prepared pristine Cu(111) and cleaned Cu(111) obtained after annealing without introducing the CH 4 gas. The growth ...