Understanding the impact of Cu surface pre-treatment on Octadecanethiol-derived self-assembled monolayer as a mask for area-selective deposition

Nanomechanical Characterization of Organic Surface Passivation Films on 50 nm Patterns during Area-Selective Deposition

“…The SAM thickness and the presence of cuprous oxide underneath the organic layer were recently discussed in an earlier work from our group. 58 Finally, λ Cu denotes the Cu photoelectron inelastic mean-free path (IMPF, ∼0.78 nm) in the substrate, 59 whereas λ Cu ODT and λ S ODT denote the Cu-and S-related photoelectron's IMFP through the carbonaceous film (∼2.12 and ∼3.81 nm, respectively), 55 with φ representing the exit angle at which the XP spectra are recorded (45°with respect to the surface's normal). Since Γ ODT is based on the S 2p 3/2 peak associated to the S−Cu bond doublet centered at 162.7 eV, a value in between the binding energy position expected for S bonded to a polymer chain and S bonded to a metal, 52,60 no S-related species but ODT bonded to Cu are considered as the SAM concentration is computed.…”

“…In eq , ρ Cu is the density of Cu atoms in the cuprous oxide surface (∼0.084 mol cm –3 ) and d the ODT thickness (1.5 ± 0.1 nm). The SAM thickness and the presence of cuprous oxide underneath the organic layer were recently discussed in an earlier work from our group . Finally, λ Cu denotes the Cu photoelectron inelastic mean-free path (IMPF, ∼0.78 nm) in the substrate, whereas λ Cu ODT and λ S ODT denote the Cu- and S-related photoelectron’s IMFP through the carbonaceous film (∼2.12 and ∼3.81 nm, respectively), with φ representing the exit angle at which the XP spectra are recorded (45° with respect to the surface’s normal).…”

Understanding Selectivity Loss Mechanisms in Selective Material Deposition by Area Deactivation on 10 nm Cu/SiO2 Patterns

“…The monolayer thickness of the organic film upon the proposed ODT deposition technique on blanket Cu was reported in a previous study published by our research group. 40 In addition, AFM height scans on 50 nm-wide Cu lines patterns prior to ALD, available in Supporting Information 7, reveal that the SAM preserves its monolayer nature on such patterns (∼2.0−2.5 nm). 31 Resolution limits of analogue measurements performed on the 10 nm CD patterns preclude one from calculating the SAM thickness on such structures.…”

“…The exposure of the Cu surface to the UV/ozone pretreatment favors the formation of a dense ODT-SAM on Cu, as described in an article previously published by our research group. 40 This surface treatment was also performed on reference substrates not intended to be coated by ODT. The SAM deposition was performed under protective N 2 atmosphere to prevent the ODT solution degradation.…”

The role of atomic oxygen in the decomposition of self-assembled monolayers during area-selective atomic layer deposition

“…In this way the material is only deposited on the metal and not the dielectric [18][19][20]. Conversely, using thiol [21] or phosphonic acid-based [22] SAMs results in material being deposited on the dielectric and not the metal/metal oxide. The SAM is then removed by etching [23,24] or electrochemically by applying a potential bias [25].…”