Understanding the FinFET Mobility by Systematic Experiments

Akarvardar, K.; Young, Chadwin D.; Baykan, Mehmet O.; Hobbs, C.

doi:10.1007/978-3-319-02021-1_3

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2019

2024

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“…It is an established fact that the characteristics of FinFETs are controlled by its physical dimensions which in turn determine the mobility, μ of carriers drifting inside the channel [15]. The μ follows non‐linear profile, which depends upon the channel field defined by the applied gate to source,

V_{gs}

and drain to source,

V_{ds}

potentials [16]. By increasing the field, there is a rise in the magnitude of μ which then attains its saturation value [17].…”

Section: Introductionmentioning

confidence: 99%

Non‐linear compact model for FinFETs output characteristics

Ahmed

Memon

2019

IET Circuits, Devices & Systems

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In this study, a non-linear compact model for I-V characteristics of FinFETs is presented. The model is developed using the profile of drifting carriers, which plays an important role in determining the device characteristics. A mobility model which incorporates the effect of applied potentials is developed and is used to predict the I-V response of the device. Particle swarm parameter extraction technique is engaged for optimum model applications. It is demonstrated by using the experimental data reported in the literature, that the proposed model can predict the I-V characteristics of FinFETs fabricated using Si and GaN materials having gate lengths ranging from 0.05 to 1 μm.

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