Understanding the Electroluminescence Mechanism of CdSe/ZnS Quantum-Dot Light-Emitting Diodes With a Focus on Charge Carrier Behavior in Quantum-Dot Emissive Layers

Kim, Dong-Jin; Lee, Seyoung; Kim, Jimyoung; Lee, Ho-Nyeon

doi:10.1109/led.2023.3268078

Cited by 7 publications

(2 citation statements)

References 27 publications

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“…Our study investigates the impact of substrate characteristics on the performance of QLEDs and interprets the causes of differences in the properties of the devices. We report the results of our work, including transient electroluminescence (EL) [21][22][23] data, energy-band parameters, the light transmittance of each substrate, and the electro-optic properties of QLEDs.…”

Section: Introductionmentioning

confidence: 99%

“…Both the glass and PEN QLEDs exhibited a decrease in rise time with increasing bias voltage, but the slope of the decrease in the PEN QLED was larger than that of the glass QLED. The rise time represents the time it takes for charge distribution within the QLED device to stabilize[21]. An increase in the applied bias voltage leads to an increase in the flux of injected charges, resulting in a faster attainment of steady state.…”

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confidence: 99%

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Substrate Dependence of CdSe/ZnS Quantum-Dot Light-Emitting Diodes: A Comparative Study between Rigid Glass and Flexible Plastic Substrates

2023

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The purpose of this study was to investigate the effect of substrate characteristics on the performance of quantum-dot light-emitting diodes (QLEDs) with the aim of developing high-performance flexible QLEDs. Specifically, we compared QLEDs made with a flexible polyethylene naphthalate (PEN) substrate to those made with a rigid glass substrate, using the same materials and structure except for the substrates. Our findings indicate that the PEN QLED had a 3.3 nm wider full width at half maximum and a 6 nm redshifted spectrum in comparison to the glass QLED. Additionally, the PEN QLED exhibited a 6% higher current efficiency, a flatter current efficiency curve, and a 2.25-V lower turn-on voltage, indicating superior overall characteristics. We attribute the spectral difference to the optical properties of the PEN substrate, such as light transmittance and refractive index. Our study also revealed that the electro-optical properties of the QLEDs were consistent with the electron-only device and transient electroluminescence results, which suggests that the improved charge injection properties of the PEN QLED were responsible. Overall, our study provides valuable insights into the relationship between substrate characteristics and QLED performance, which can be used to develop high-performance QLEDs.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Substrate Dependence of CdSe/ZnS Quantum-Dot Light-Emitting Diodes: A Comparative Study between Rigid Glass and Flexible Plastic Substrates

2023

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Improving the Device Stability by Controlling the Morphology of Quantum Dot Emissive Layer Via a Coating Process in Blue QLEDs

Diker,

Ozguler,

Sevim Unluturk

et al. 2024

ChemistrySelect

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Blue light‐emitting CdSe@ZnS/ZnS quantum dot (QD) nanoparticles (NPs) were synthesized and their photophysical properties in both solution and film phases were investigated. The morphological properties of films prepared by different coating methods i. e. single layer coating from low to high concentrations of QD solutions and layer‐by‐layer (multilayer) coating within constant low QD solution concentration, were also examined in detail. Varying the concentration (1–10 mg/mL) and the number of layers (from 1–16) did not essentially affect the photophysical properties of QD films, although it resulted in a direct increment in QD film thickness. The concentration and layer‐dependent films were used as an emissive layer (EML) in QD light‐emitting diodes (QLEDs). Although the “6 mg/ml−1 Layer” QD EML‐based device exhibited relatively high device efficiency compared to the “1 mg/ml−10 Layers” based one at working voltage region, it had ~2‐fold higher efficiency roll‐off at high voltage region. The performance differences for both devices with the same QD EML thickness were attributed to the morphological variations for the QD layer in terms of surface roughness, void density, aggregates/clusters, and trap sites that were directly related to the charge injection balance and Auger recombination.

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Transparent CdSe/ZnS quantum-dot light-emitting diodes with WOx/Ag/WOx transparent electrodes achieving higher efficiency than opaque quantum-dot light-emitting diodes

Kim,

Lee

2024

Current Applied Physics

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Understanding the Electroluminescence Mechanism of CdSe/ZnS Quantum-Dot Light-Emitting Diodes With a Focus on Charge Carrier Behavior in Quantum-Dot Emissive Layers

Cited by 7 publications

References 27 publications

Substrate Dependence of CdSe/ZnS Quantum-Dot Light-Emitting Diodes: A Comparative Study between Rigid Glass and Flexible Plastic Substrates

Substrate Dependence of CdSe/ZnS Quantum-Dot Light-Emitting Diodes: A Comparative Study between Rigid Glass and Flexible Plastic Substrates

Improving the Device Stability by Controlling the Morphology of Quantum Dot Emissive Layer Via a Coating Process in Blue QLEDs

Transparent CdSe/ZnS quantum-dot light-emitting diodes with WOx/Ag/WOx transparent electrodes achieving higher efficiency than opaque quantum-dot light-emitting diodes

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