Understanding the Correlation Between Temperature Dependent Performance and Trap Distribution for Nickel Oxide Based Inverted Perovskite Solar Cells

Rana, Aniket; Sharma, Punit; Kumar, Amit; Pareek, Saurabh; Waheed, Sobia; Singh, Rajiv Kumar; Karak, Supravat

doi:10.1109/ted.2021.3084906

Cited by 12 publications

(16 citation statements)

References 35 publications

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“…This observation can be explained by the differences in their trap state energetics and density, where longer time scale photocurrent can be caused by de-trapping processes of the photoinduced carriers. [44,45] This mechanism is in good agreement with intensity-dependent transient photocurrent response (Figure 6), where under CW background illumination, all the devices show similar transient response due to the filling of shallow traps. Photodetectors that are based on PbS QD with PbX 2 ligands have already shown a high bandwidth of 3 dB bandwidth at >100 kHz, dynamic range of ≈90 dB in the visible and the NIR wavelength regions and detectivity >10 13 Jones.…”

Section: Discussionsupporting

confidence: 86%

“…This observation can be explained by the differences in their trap state energetics and density, where longer time scale photocurrent can be caused by de‐trapping processes of the photoinduced carriers. [ 44,45 ] This mechanism is in good agreement with intensity‐dependent transient photocurrent response (Figure 6), where under CW background illumination, all the devices show similar transient response due to the filling of shallow traps.…”

Section: Discussionsupporting

confidence: 85%

“…Moreover, by assuming that at time t only the carriers at energy E fully de‐trap, the energy can be written as a function of time by

\begin{array}{*{20}{c}}{E\left( t \right) = kT\ln \left( {{v_o}t} \right)}\end{array}

where v o is the frequency at which charges attempt to escape and is assumed as ≈10 9 s −1 . [ 45 ] As it is difficult to accurately measure the fraction of states filled at each energy level, Figure 5b shows the trap density of states as a function of energy with the assumption of f = 1 (all the states are filled at each energy level). Therefore, it represents the minimum trap density of states for the photodetectors with the three different types of ligands.…”

Section: Resultsmentioning

confidence: 99%

“…where v o is the frequency at which charges attempt to escape and is assumed as ≈10 9 s −1 . [45] As it is difficult to accurately measure the fraction of states filled at each energy level, Figure 5b shows the trap density of states as a function of energy with the assumption of f = 1 (all the states are filled at each energy level). Therefore, it represents the minimum trap www.advopticalmat.de density of states for the photodetectors with the three different types of ligands.…”

Section: Photodetector Figures Of Meritmentioning

confidence: 99%

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Impact of Ligands on the Performance of PbS Quantum Dot Visible–Near‐Infrared Photodetectors

Bothra

Albaladejo‐Siguan

Vaynzof

et al. 2022

Advanced Optical Materials

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oleic acid and oleylamine passivates the surface defects, which, however, limits the performance of the photodetector due to the low charge carrier mobility. [9,10] The introduction of CQD sensitization with low defect and lattice-matched ligands such as lead halide perovskite semiconductors and molecular lead halides, has resulted in better device performance due to the improved charge carrier transport. [6,11,12] Moreover, these devices are self-powered, that is, they do not require the application of an external voltage bias for photodetection. [13][14][15][16][17] The process of ligand optimization in these devices depends upon the size of the QDs as well. For instance, infrared PbS QD photodetectors that have peak efficiencies of around 1500 nm, and large (>7 nm) QD sizes exhibit properties, such as a cubiclike shape and dominance of (100) facets, which differs from PbS QDs with smaller (3 nm) sizes. [18][19][20] Unlike solar cells, photodetectors need to perform at low incident powers; therefore, an important criterion is the realization of devices with low trap densities. Additional requirements for the fabrication of quantum dotbased photodetector devices that show good performance and stability include type I band alignment for the shell, matched lattice constant, and appropriate interdot spacing. [15,19,[21][22][23] For instance, Syntnyk et al. demonstrated that ligand shells that have lattice parameters that are mismatched in relation to those of the core can form defective or incomplete shells due to the induced strain. [21] Bederak et al. showed that the energetic disorder increases as the interdot spacing decreases, Solution-processed lead sulfide quantum dots (PbS QDs) are an excellent candidate for photodetector applications because they exhibit broadband absorption, a wide range of tuneable bandgaps, high stability in air, and mechanical flexibility. However, a crucial criterion for the fabrication of high-performance photodetectors is the selection of the ligands, which can facilitate charge carrier transport between the PbS QDs and passivate the surface defects. In this work, the authors have studied the effect of traps on the performance of PbS QD photodetectors that are fabricated using different types of ligands, using intensity-dependent photoresponse dynamics. The best devices with lead halide ligands show a dark current density of 5 × 10 −9 A cm −2 at −0.2 V, which is one of the lowest values reported thus far for solution-processed PbS QD-based photodetectors. Moreover, these devices show a high linear dynamic range (≈90 dB) and high detectivity (>10 13 Jones), in addition to an f −3 dB of greater than 100 kHz without the application of an external voltage bias at a wavelength of 784 nm. These results suggest that with an appropriate selection of ligands, solutionprocessed photodetectors with a lower density of traps and a better device performance can be fabricated.

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Section: Discussionsupporting

confidence: 86%

Section: Discussionsupporting

confidence: 85%

“…Moreover, by assuming that at time t only the carriers at energy E fully de‐trap, the energy can be written as a function of time by

\begin{array}{*{20}{c}}{E\left( t \right) = kT\ln \left( {{v_o}t} \right)}\end{array}

Section: Resultsmentioning

confidence: 99%

Section: Photodetector Figures Of Meritmentioning

confidence: 99%

See 2 more Smart Citations

Impact of Ligands on the Performance of PbS Quantum Dot Visible–Near‐Infrared Photodetectors

Bothra

Albaladejo‐Siguan

Vaynzof

et al. 2022

Advanced Optical Materials

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“…The tail‐state energy was calculated by estimating the slope of exponential decay of tail in tDOS distribution. [ 30 ] Mainly, shallow traps are involved in creating the tail states; they capture more carriers for pretransit condition and detrap the carriers to contribute more current for post‐transit conditions. The tail‐state energy values of OPVc for different doping levels at unbiased conditions are summarized in Table 1.…”

Section: Resultsmentioning

confidence: 99%

Accessing Deep Traps Distribution in FeS₂‐Doped Organic Photovoltaics

et al. 2023

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Although doping has the potential to improve the performance of organic photovoltaic cells (OPVc), doping effects on charge transport, recombination, and energetic disorder are still obscure. Doping has two opposing effects: on the one hand, dopant ions create more trap centers, while free dopant‐induced charges fill deep states, potentially providing better performance. The optimum amount of dopants can considerably improve the performance of OPVc. Herein, the energetic distribution of trap states in P3HT: PC71BM‐based OPVc doped with iron pyrite nanocubes (NCs) is reported. Using the reverse bias transient photocurrent (TPC) measurement, the energetic trap distributions with different doping conditions are studied. The photovoltaic characteristics and TPC phenomena of the OPVc greatly improve through doping. Variations in trap distributions with doping levels are analyzed to interpret the obtained trap density of states profiles. The light‐dependent current–voltage characteristics help to identify the presence of a less trap‐assisted recombination process in the optimum device. This study highlights the mechanism for performance improvement in devices with optimal doping of iron pyrite NCs.

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Controlling Nucleation and Crystal Growth Orientation via Intermediate Ion‐Complex Formation for Efficient α‐FA_0.95Cs_0.05PbI₃ Perovskite Solar Cells

Kumar,

Gupta,

Pathak

et al. 2023

Energy Tech

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The formamidinium–cesium (FA–Cs) alloyed metal halide perovskites demonstrate superior photovoltaics device stability; however, alloying at lower Cs concentrations (≤5%) undergoes complex intermediate phase transitions that disrupt morphological and structural properties. Herein, an intermediate ion‐complex method in a bid is attempted to achieve a near‐optimal energy bandgap of 1.52 eV for α‐FAPbI3 perovskite (alloyed with 5% Cs+ cation). Upon incorporation of judicious amount of smaller and more volatile ions (such as Cl−/Br− and methylammonium [MA]+/Cs+) into the host FAPbI3 system, these ions are observed to persist in the “transitional‐phase” and “stimulate” the formation of α‐phase. Consequently, using X‐ray and photoluminescence quantum efficiency measurements, the formation of a (110)‐plane‐oriented high‐quality FA0.95Cs0.05PbI3 perovskite thin film with significantly reduced nonradiative recombination is confirmed. An area of 25 mm2 yields a power conversion efficiency (PCE) of 20.21% and a stabilized power output of 19.82%, leveraging open‐circuit voltage of 90.4% of that Shockley–Queisser limit. The devices sustain over 1000 h without any PCE degradation.

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Understanding the Correlation Between Temperature Dependent Performance and Trap Distribution for Nickel Oxide Based Inverted Perovskite Solar Cells

Cited by 12 publications

References 35 publications

Impact of Ligands on the Performance of PbS Quantum Dot Visible–Near‐Infrared Photodetectors

Impact of Ligands on the Performance of PbS Quantum Dot Visible–Near‐Infrared Photodetectors

Accessing Deep Traps Distribution in FeS₂‐Doped Organic Photovoltaics

Controlling Nucleation and Crystal Growth Orientation via Intermediate Ion‐Complex Formation for Efficient α‐FA_0.95Cs_0.05PbI₃ Perovskite Solar Cells

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Understanding the Correlation Between Temperature Dependent Performance and Trap Distribution for Nickel Oxide Based Inverted Perovskite Solar Cells

Cited by 12 publications

References 35 publications

Impact of Ligands on the Performance of PbS Quantum Dot Visible–Near‐Infrared Photodetectors

Impact of Ligands on the Performance of PbS Quantum Dot Visible–Near‐Infrared Photodetectors

Accessing Deep Traps Distribution in FeS2‐Doped Organic Photovoltaics

Controlling Nucleation and Crystal Growth Orientation via Intermediate Ion‐Complex Formation for Efficient α‐FA0.95Cs0.05PbI3 Perovskite Solar Cells

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Accessing Deep Traps Distribution in FeS₂‐Doped Organic Photovoltaics

Controlling Nucleation and Crystal Growth Orientation via Intermediate Ion‐Complex Formation for Efficient α‐FA_0.95Cs_0.05PbI₃ Perovskite Solar Cells