2022
DOI: 10.48550/arxiv.2206.09999
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Understanding RowHammer Under Reduced Wordline Voltage: An Experimental Study Using Real DRAM Devices

Abstract: RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby rows. Recent DRAM chips are more vulnerable to RowHammer: with technology node scaling, the minimum number of activate-precharge cycles to induce a RowHammer bit flip reduces and the RowHammer bit error rate increases. Therefore, it is critical to develop effective and scalable … Show more

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