Abstract:Displacement Talbot lithography (DTL) is a new technique for patterning large areas with sub-micron periodic features with low cost. It has applications in fields that cannot justify the cost of deep-UV photolithography, such as plasmonics, photonic crystals, and metamaterials and competes with techniques, such as nanoimprint and laser interference lithography. It is based on the interference of coherent light through a periodically patterned photomask. However, the factors affecting the technique's resolution… Show more
“…2e). Our previous paper explores, by means of simulations and experiments, the resolution limit of DTL as a function of the resist employed, the configuration of the mask and the wavelength of illumination 38 .Fig. 2DTL (blue box) and D 2 TL (green box) nanopatterns created from a 1 µm pitch 550 nm opening mask.Developed positive photoresist after classical DTL at a 160 mJ/cm 2 , b 300 mJ/cm 2 , c 480 mJ/cm 2 and d 650 mJ/cm 2 .…”
Section: Resultsmentioning
confidence: 99%
“…However, it has advantages over both these latter processes, such as a low sensitivity to substrate surface defects, no issues with master lifetime, and a high system stability, which is of particular interest for the manufacture of nano-engineered semiconductors, including III-nitrides materials. To date, several reports using DTL have been published over the last few years, mainly focusing on resist patterning 35–38 , and the fabrication of metal nanoparticles 39 , high-aspect ratio Si nanostructures 40 or high resolution gratings 41 .…”
Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D2TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL/D2TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-engineered III-nitride materials.
“…2e). Our previous paper explores, by means of simulations and experiments, the resolution limit of DTL as a function of the resist employed, the configuration of the mask and the wavelength of illumination 38 .Fig. 2DTL (blue box) and D 2 TL (green box) nanopatterns created from a 1 µm pitch 550 nm opening mask.Developed positive photoresist after classical DTL at a 160 mJ/cm 2 , b 300 mJ/cm 2 , c 480 mJ/cm 2 and d 650 mJ/cm 2 .…”
Section: Resultsmentioning
confidence: 99%
“…However, it has advantages over both these latter processes, such as a low sensitivity to substrate surface defects, no issues with master lifetime, and a high system stability, which is of particular interest for the manufacture of nano-engineered semiconductors, including III-nitrides materials. To date, several reports using DTL have been published over the last few years, mainly focusing on resist patterning 35–38 , and the fabrication of metal nanoparticles 39 , high-aspect ratio Si nanostructures 40 or high resolution gratings 41 .…”
Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D2TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL/D2TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-engineered III-nitride materials.
“…In particular, the 1-D grating couplers have their limitations in fabrication and design flexibility. Typical deep-UV fabrication processes require a minimum feature size of 75-100 nm [52]. In fabrication, the etching process is generally easier and faster to be realized than the material growth process.…”
Section: Discussionmentioning
confidence: 99%
“…The etched depth ed is equal to the waveguide thickness h of fully-etched grating couplers and less than the thickness of shallow-etched grating couplers. Some special designs such as apodizing [7][8][9], L-shape gratings [10], or inverted-T-shape gratings [11] were used to increase the performance of grating coupling.…”
Section: Grating Couplermentioning
confidence: 99%
“…10 The ffx versus ffy that satisfy polarization independent for 1550 nm and 1310 nm in a grating coupler with subwavelength square-shape-hole structure. ...... 96 65.…”
Fresnel diffraction of light beams with a topological charge on a 2D regular amplitude transparency mask is studied. Numerical predictions show that the 3D optical lattices of optical vortices can be formed using the Talbot effect, with these predictions confirmed by the experimental reconstruction of all 3D optical vortex lattices. The periodicity of the 3D optical vortex lattices is determined by the light wavelength and periodicity of a transparency mask. Furthermore, it is shown that the optical vortices are created and annihilated during light propagation behind the mask with the preservation of the total topological charge. The 3D optical vortex lattices are considered to be tolerant to the perturbations induced by trapped particles caused by the features of the Talbot effect. The 3D optical vortex lattices open new possibilities for light–matter interactions and the related applications.
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