Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers

Shin, Jonghoon; Seo, Haengha; Ye, Kun Hee; Jang, Yoon Ho; Kwon, Dae Seon; Lim, Junil; Kim, Tae Kyun; Paik, Heewon; Song, Haewon; Kim, Ha Ni; Byun, Seungyong; Shin, Seong Jae; Kim, Kyung Do; Lee, Yong Bin; Lee, In Soo; Choi, Jung-Hae; Hwang, Cheol Seong

doi:10.1039/d4tc00061g

J. Mater. Chem. C

2024

DOI: 10.1039/d4tc00061g

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Understanding phase evolution of ferroelectric Hf_0.5Zr_0.5O₂ thin films with Al₂O₃ and Y₂O₃ inserted layers

Jonghoon Shin,

Haengha Seo,

Kun Hee Ye

et al.

Abstract: This study investigates the insertion traits of the Al2O3 and Y2O3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf0.5Zr0.5O2 (HZO) thin films grown by atomic layer deposition (ALD).

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Cited by 2 publications

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Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO₂ thin films

Shin,

Do Kim

et al. 2024

J. Mater. Chem. C

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Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO₂ thin films

Shin,

Do Kim

et al. 2024

J. Mater. Chem. C

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Internal strain identification of seed-layered ZrO2, aluminum-, and yttrium-doped ZrO2 thin films via grazing incidence x-ray diffraction

Seo,

Park,

Cho

et al. 2024

Journal of Applied Physics

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Grazing incidence x-ray diffraction reveals that conventional post-deposition-annealed ZrO2 and in situ crystallized (by local epitaxy) ZrO2 thin films (<15 nm) have different internal strain states. A comparison between single- and two-step grown films enables the diverse strain components to be discretely identified. In particular, thickness-dependent intrinsic growth strain is unevenly distributed within the film according to the Volmer–Weber growth. Furthermore, extrinsic thermal strain, locally present in the annealed seed layer, does not spread over the in situ crystallized upper main layer of the two-step film. Post-deposition annealing of the two-step film renders the strain state identical to the single-step films by imposing thermal strain on the in situ crystallized main layer. Local strains created by diffused aluminum and yttrium dopants are also examined. Since each stress factor plays a vital role in the phase formation and electrical behaviors of ZrO2 and other fluorite-structure films, this method will pave the way for understanding the film's internal strain distribution and accompanying performance engineering.

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Understanding phase evolution of ferroelectric Hf_0.5Zr_0.5O₂ thin films with Al₂O₃ and Y₂O₃ inserted layers

Abstract: This study investigates the insertion traits of the Al2O3 and Y2O3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf0.5Zr0.5O2 (HZO) thin films grown by atomic layer deposition (ALD).

Cited by 2 publications

References 52 publications

Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO₂ thin films

Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO₂ thin films

Internal strain identification of seed-layered ZrO2, aluminum-, and yttrium-doped ZrO2 thin films via grazing incidence x-ray diffraction

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Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers

Abstract: This study investigates the insertion traits of the Al2O3 and Y2O3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf0.5Zr0.5O2 (HZO) thin films grown by atomic layer deposition (ALD).

Cited by 2 publications

References 52 publications

Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO2 thin films

Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO2 thin films

Internal strain identification of seed-layered ZrO2, aluminum-, and yttrium-doped ZrO2 thin films via grazing incidence x-ray diffraction

Contact Info

Product

Resources

About

Understanding phase evolution of ferroelectric Hf_0.5Zr_0.5O₂ thin films with Al₂O₃ and Y₂O₃ inserted layers

Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO₂ thin films

Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO₂ thin films