Understanding phase-change materials with unexpectedly low resistance drift for phase-change memories

Li, Chao; Hu, Chaoquan; Wang, Jianbo; Yu, Xiao; Yang, Zhongbo; Jian, Liu; Li, Yuankai; Bi, Chaobin; Zhou, Xilin; Zheng, Weitao

doi:10.1039/c8tc00222c

Cited by 24 publications

(15 citation statements)

References 60 publications

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“…Important device nonidealities from the intrinsic material physics of phase-change materials [12][13][14][15][16][17][18] thus arise and reduce the numerical precision achievable with this technology. Both materials and device engineering have been proposed as solutions [19][20][21][22][23] to minimizing these non-idealities. Device engineering invokes novel cell architectures, including the concept of projected PCM.…”

Section: Introductionmentioning

confidence: 99%

Projected Mushroom Type Phase‐Change Memory

Sarwat

Philip²,

Chen³

et al. 2021

Adv Funct Materials

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Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in places without the need to shuttle data between memory and processing units. However, nonidealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promising approach is projecting the phase configuration of phase change material onto some stable element within the device. Here, the projection mechanism in a prominent phase-change memory device architecture, namely mushroom-type phase-change memory, is investigated. Using nanoscale projected Ge 2 Sb 2 Te 5 devices, the key attributes of state-dependent resistance, drift coefficients, and phase configurations are studied, and using them how these devices fundamentally work is understood.

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Section: Introductionmentioning

confidence: 99%

Projected Mushroom Type Phase‐Change Memory

Sarwat

Philip²,

Chen³

et al. 2021

Adv Funct Materials

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“…The DOS and p‐DOS spectra of Ge 2 Sb 2 Te 5 and GeTe were calculated by the CASTEP model based on density functional theory. [ 60 ] There was a total of 58 atoms (including 13 Ge atoms, 13 Sb atoms, and 32 Te atoms) and 6 vacancies in the cubic Ge 2 Sb 2 Te 5 . The lattice constant was set to 0.601 nm.…”

Section: Methodsmentioning

confidence: 99%

Phase Change Materials for Nonvolatile, Solid‐State Reflective Displays: From New Structural Design Rules to Enhanced Color‐Changing Performance

Tao

Wang

et al. 2020

Advanced Optical Materials

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can rapidly convert from amorphous to crystalline states under appropriate electrical/optical/thermal excitation. [1][2][3][4][5][6][7][8] During transformation from amorphous to crystalline states, the chemical bonds and degree of order of PCMs change significantly. [9][10][11][12][13] As a result, their electrical and optical properties also change drastically. [12,[14][15][16] Because of the variability of their electrical properties (mainly resistance), PCMs have been widely used in nonvolatile electric fields, such as highdensity memories. [17][18][19][20][21][22][23] Because of the variability of their optical properties (mainly optical constants, [9,24,25] reflectivity, [26,27] transmission, [25,28,29] absorption, [30,31] and emissivity [32] ), PCMs been widely applied in nonvolatile photonic applications, such as all-photonic memories, [26,33,34] active absorbers, [35] filters, [25] lenses, [34,36] sensors, [36] displays, etc. [26,27,[37][38][39] Among the above optical applications, the PCM-based solid-state reflective display [27] is a revolutionary display technology. It has many advantages, such as high resolution, rich colors, and fast color switching over traditional technologies, such as electrophoresis and electronic ink display. The PCM-based solid-state reflective display has become the most promising portable display technology.Current research on PCM-based nonvolatile coatings for displays mainly focuses on designing multilayer film structures and improving their color-changing properties. Specifically, the related research can be roughly summarized into three aspects. First, Hosseini et al. [26,27,40] pioneered the new concept of PCMbased "non-volatile displays" in 2014, and then designed and developed Ge 2 Sb 2 Te 5 -and Ag 3 In 4 Sb 76 Te 17 -based four-layer display coatings with a metal/transparent dielectric/PCM/transparent dielectric structure. These coatings have high resolution, color tunability, and broad color gamut, [10] and thus can be applied to various opaque/transparent and rigid/soft substrates. Second, Cheng et al., [41,42] and Liu, [43] et al. systematically studied the effect of the thicknesses of transparent dielectric layer and Ge 2 Sb 2 Te 5 layer on the color rendering performance of coatings. They extended the color gamut of the coatings by optimizing the thickness of each film. Besides, they developed a Ge 2 Sb 2 Te 5 -based three-layer film system, which could reduce With the arrival of omnimedia era, there has been an increasing demand for energy-saving, colorful, and portable displays. Traditional display technologies, such as electrophoresis and electronic ink display suffer from low color switching speed and poor color richness. Due to their high performances, phase change materials (PCMs)-based nonvolatile, solid-state reflective display coatings have become the most promising materials for new portable display technology. Existing researches mainly focus on improving the color-changing performance of coatings by optimizing film structural parameters, but ignore...

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“…[3] However, the unstable resistance of the intermediate state could narrow the tolerance of the resistance noise, and therefore, raise the difficulty level of the circuit design. [4] Thus, the application of a phase-change material that displays three or more stable resistance states is a favorable method for achieving multilevel storage. Therefore, a superlatticelike (SLL) structure using two-phase change materials was designed.…”

Section: Introductionmentioning

confidence: 99%

Cr₇Ge₃₃Te₆₀/Hf₁₆Ge₆Sb₇₈ Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

Hua

et al. 2021

Physica Rapid Research Ltrs

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A multilevel phase-change memory cell that is based on a CrGeTe(CrGT)/ HfGeSb(HfGS) superlattice-like (SLL) structure is proposed. With increasing temperature in resistance-temperature tests, the SLL thin films exhibit a threestep phase-change process that corresponds to the crystallization of Sb, GeTe, and CrGeTe. A stable and reversible three-step phase change is identified as the key characteristic for realizing multilevel storage. This so-designed multiplecrystallization SLL structure is a feasible way to increase the storage density.

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Understanding phase-change materials with unexpectedly low resistance drift for phase-change memories

Abstract: There is an increasing demand for high-density memories with high stability for supercomputers in this big data era.

Cited by 24 publications

References 60 publications

Projected Mushroom Type Phase‐Change Memory

Projected Mushroom Type Phase‐Change Memory

Phase Change Materials for Nonvolatile, Solid‐State Reflective Displays: From New Structural Design Rules to Enhanced Color‐Changing Performance

Cr₇Ge₃₃Te₆₀/Hf₁₆Ge₆Sb₇₈ Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

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Understanding phase-change materials with unexpectedly low resistance drift for phase-change memories

Abstract: There is an increasing demand for high-density memories with high stability for supercomputers in this big data era.

Cited by 24 publications

References 60 publications

Projected Mushroom Type Phase‐Change Memory

Projected Mushroom Type Phase‐Change Memory

Phase Change Materials for Nonvolatile, Solid‐State Reflective Displays: From New Structural Design Rules to Enhanced Color‐Changing Performance

Cr7Ge33Te60/Hf16Ge6Sb78 Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

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Cr₇Ge₃₃Te₆₀/Hf₁₆Ge₆Sb₇₈ Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory