Uncooled thermopile infrared detector with chromium oxide absorption layer

Lee, Sung Jun; Lee, Yun Hi; Suh, Sang Hi; Oh, Young Je; Kim, Tae Yoon; Oh, Myeong Hwan; Kim, Chul Ju; Ju, Byeong Kwon

doi:10.1016/s0924-4247(01)00743-9

Cited by 21 publications

(6 citation statements)

References 12 publications

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“…Photoconductors, photoelectromagnetic detectors, Dember effect detectors, and MCT photodiodes [9] were some of the devices studied for room temperature operation. Different types of uncooled thermal IR detectors, such as thermocouples and pyroelectric and ferroelectric detectors are currently available [10][11][12], and are based on different properties of materials. Microbolometer detectors are made of either vanadium oxide or amorphous silicon, while the ferroelectric detectors are made of barium strontium titanate.…”

Section: Introductionmentioning

confidence: 99%

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector

2011

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An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30 eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21 μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21 μm wavelength.

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Section: Introductionmentioning

confidence: 99%

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector

2011

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“…To suppress this type of noise, the cooling of semiconductor-based detectors such as photoconductors, photoelectromagnetic detectors, Dember effect detectors, and HgCdTe (MCT) photodiodes has been investigated for room temperature operations [5]. Uncooled infrared (IR) detectors such as thermocouples, pyroelectric and ferroelectric detectors, and microbolometers are currently available [6][7][8][9]. Much attention has been paid to fabricating uncooled IR detectors with other operating mechanisms such as the optomechanical IR imaging system with a bimaterial microcantilever array [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Noise sources and improved performance of a mid-wave infrared uncooled silicon carbide optical photodetector

2014

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An uncooled photon detector is fabricated for the mid-wave infrared (MWIR) wavelength of 4.21 μm by doping an n-type 4H-SiC substrate with gallium using a laser doping technique. The dopant creates a p-type energy level of 0.3 eV, which is the energy of a photon corresponding to the MWIR wavelength 4.21 μm. This energy level was confirmed by optical absorption spectroscopy. The detection mechanism involves photoexcitation of carriers by the photons of this wavelength absorbed in the semiconductor. The resulting changes in the carrier densities at different energy levels modify the refractive index and, therefore, the reflectance of the semiconductor. This change in the reflectance constitutes the optical response of the detector, which can be probed remotely with a laser beam such as a He-Ne laser and the power of the reflected probe beam can be measured with a conventional laser power meter. The noise mechanisms in the probe laser, silicon carbide MWIR detector, and laser power meter affect the performance of the detector in regards to aspects such as the responsivity, noise equivalent temperature difference (NETD), and detectivity. For the MWIR wavelengths of 4.21 and 4.63 μm, the experimental detectivity of the optical photodetector of this study was found to be 1.07×10(10) cm·Hz(1/2)/W, while the theoretical value was 1.11×10(10) cm·Hz(1/2)/W. The values of NETD are 404 and 15.5 mK based on experimental data for an MWIR radiation source with a temperature of 25°C and theoretical calculations, respectively.

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“…To overcome these shortcomings, infrared absorbers with high infrared absorption, light weight and low cost have been investigated. Several materials such as carbon nanotubes, 6 carbon black, 7 graphite, 8 CrOx, 9 Ga-Si-O 10 and NiCr/SiN/NiCr 11 have been studied as infrared absorbers. CuO film absorbance was recently reported as approximately 50% at wavelengths of 0.4-1.0 µm.…”

Section: Introductionmentioning

confidence: 99%

Infrared Absorption Films Developed by Copper Electroplating with Chemical Etching and Subsequent Blackening

et al. 2014

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High infrared-absorption films having low cost and light weight are indispensable for infrared sensors. We developed IR-adsorption coatings with low-reflectance and low-transmittance at wavelengths of 3-13 µm, based on a copper electroplating film pretreated with chemical etching and subsequent blackening. The chemical etching and blackening respectively produced columnar and feather-shaped structures on a copper surface. The reflectance and the transmittance of the films were below 15% and below 1% at wavelengths of 3-13 µm, respectively. The current coating technique might be useful to develop high absorption, low cost, and lightweight infrared absorbers.

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Uncooled thermopile infrared detector with chromium oxide absorption layer

Cited by 21 publications

References 12 publications

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector

Noise sources and improved performance of a mid-wave infrared uncooled silicon carbide optical photodetector

Infrared Absorption Films Developed by Copper Electroplating with Chemical Etching and Subsequent Blackening

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