Uncooled InSb/In1−<i>x</i>Al<i>x</i>Sb mid-infrared emitter

Ashley, T.; Elliott, C.T.; Gordon, Neil T.; Hall, R. S.; Johnson, Andrew; Pryce, G.J.

doi:10.1063/1.111981

Cited by 56 publications

(17 citation statements)

References 9 publications

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“…Such devices are anticipated to be reconfi gurable at GHz time scales and capable of mimicking nearly all linear refractive and diffractive optical elements. Heterojunction devices using InSb and InAlSb layers, (infrared detectors, [ 55,64 ] LEDs, [ 65,66 ] transistors, [ 58,67,68 ] etc.) similar to the proposed structure have been demonstrated with comparable device characteristics.…”

Section: Discussionmentioning

confidence: 99%

Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators

Iyer

Pendharkar

Schuller

2016

Advanced Optical Materials

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paradigm in reconfi gurable metasurfacebased optics. Here, we use electromagnetics and device simulations to design electrically pumped semiconductor heterostructure resonators capable of arbitrarily tuning the refl ection phase of infrared light with little change in amplitude.Previous approaches for tuning metasurfaces-using metallic resonators coupled to an index tunable background [ 8,[23][24][25][26][27][28] or mechanically changing the shape of metallic resonators [ 5,29,30 ] have been unable to achieve reconfi gurable 2π phase shifts. This inability to achieve 2π phase control stems fundamentally from the nature of the underlying optical antennas. Because the light-matter interaction lengths are subwavelength and the quality factors modest ( Q ≈ 1−10), very large refractive index modulation is needed (Δ n ≥ 1). InSb [31][32][33] or InAs [ 27,34,35 ] support free-carrier index shifts of this magnitude due to their high mobility and low electron effective mass. In our previous theory work, [ 36 ] we demonstrated full 2π tuning of the transmission phase of semiconductor metasurface by modulating the carrier concentration in InSb resonators between 10 17 -10 18 cm −3 . However, we did not consider how to achieve such modulation. Here, we use combined electromagnetic [ 37 ] and device simulations to demonstrate subwavelength 1D heterojunction device resonators with electrically reconfi gurable refl ection phase. We fi rst demonstrate a new resonator geometry that allows for integration of metal electrodes with dielectric-type Mie resonances. Subsequently, we incorporate an InSb based heterojunction device layer into the resonator architecture. This novel device design employs electron and hole blocking layers to achieve large modulations of carrier concentration over electrically large dimensions, enabling near-2π tuning of refl ection phase with minimal changes in refl ection amplitude. Finally, we demonstrate fully continuous and tunable steering of high-quality narrow, diffraction lobes in resonator arrays. Results and DiscussionGiven the need for integrating top and bottom electrical contacts, our basic metasurface element is a modifi ed version of a 1D "strip" resonator sitting atop a refl ecting back electrode shown in

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Section: Discussionmentioning

confidence: 99%

Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators

Iyer

Pendharkar

Schuller

2016

Advanced Optical Materials

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“…The output of the bulk InSb LED ͑B2͒ has a near linear dependence on current ͑at these levels͒ as seen previously in similar devices. 10 The output of sample QW1 turns over at currents above ϳ30 mA, whereas the outputs of B1 and QW2 show a superlinear dependence on current, with the output of QW2 showing the most dramatic increase with increasing current. Further experiments are underway to investigate the dominant recombination mechanisms in these samples, and also the possible effects of thermal carrier escape from the quantum wells, in order to understand the observed dependence of the emittance on current.…”

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confidence: 99%

InSb ∕ AlInSb quantum-well light-emitting diodes

Nash

Haigh

Hardaway

et al. 2006

Applied Physics Letters

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“…Meanwhile, several uncooled InSb LEDs have been reported [7,8]. These LEDs used as an InSb substrate or relaxed metamorphic buffer layer to accommodate the large lattice mismatch between GaAs (0 0 1) substrates and InSb epi-layers.…”

Section: Introductionmentioning

confidence: 99%