“…In particular, the Cu +/0 atoms intercalated in the Bi 2 Se 3 van der Waals (vdW) gaps typically act as electron donors to enhance the conductivity, while substitutional doped Cu 2+ ions within the Bi 2 Se 3 lattice (occupying Bi 3+ sites) behave as acceptors to reduce the concentration of free electrons. − It has also been shown that Cu-doped Cu x Bi 2 Se 3 may exhibit superconductivity under a certain doping concentration, offering an interesting system for exploring novel phenomena such as odd-parity nematic superconductivity. ,, Specifically, Bi 2 Se 3 is a topological insulator with strong spin–orbit coupling (SOC) and is characterized by topological invariants of the valence band. Therefore, Cu x Bi 2 Se 3 holds significant promise for realizing topological superconductivity, a phenomenon that may lead to new physics with important implications for fault-tolerant topological quantum computing. ,− However, studies to date indicate that superconductivity is detectable only in the range of 0.1 ≤ x ≤ 0.5 for Cu x Bi 2 Se 3 , suggesting that the exact doping range can profoundly affect the transport properties of Cu x Bi 2 Se 3 . − Previous studies also suggested that Cu x Bi 2 Se 3 maintains the topological surface state while exhibiting superconductivity when x ≤ 0.3. ,, Thus, achieving precise control over doping sites and concentration in Cu x Bi 2 Se 3 is of vital importance for tailoring their electronic and emergent quantum properties.…”