Unconventional Robust Spin-Transfer Torque in Noncollinear Antiferromagnetic Junctions

Ghosh, Srikrishna; Manchon, Aurélien; Železný, Jakub

doi:10.1103/physrevlett.128.097702

Cited by 22 publications

(16 citation statements)

References 42 publications

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“…In addition, as shown in Supplementary Information S8, the same switching polarity and similar level of switching ratio in Ti/Mn3Sn/Ti symmetric structure with Ti/Mn3Sn further attests that the switching is not induced by interface effect. After the submission of this manuscript, several theoretical and experimental works have been published, which support the spin current generation and grain-based switching mechanism discussed in this study 13,51,60 .…”

Section: Discussionsupporting

confidence: 62%

Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current

et al. 2022

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Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn3Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn3Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore, the switching polarity reverses when the MgO thickness exceeds around 3 nm, which cannot be explained by the spin-orbit torque scenario due to spin current injection from the Ta layer. Evident current-induced switching is also observed in MgO/Mn3Sn and Ti/Mn3Sn bilayers, where external injection of spin Hall current to Mn3Sn is negligible. The inter-grain spin-transfer torque induced by spin-polarized current explains the experimental observations. Our findings provide an alternative pathway for electrical manipulation of non-collinear antiferromagnetic state without resorting to the conventional bilayer structure.

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Section: Discussionsupporting

confidence: 62%

Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current

et al. 2022

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“…In these systems, the broken timereversal symmetry and large Berry curvature in momentum space give rise to strong anomalous Hall effect (AHE) [12,13] and magneto-optical responses [14][15][16][17], similar to those of ferromagnets but in the absence of significant magnetization. Theoretical work shows that these materials can even exhibit a large tunneling magnetoresistance [18], whereas the emergence of exotic phenomena such as the chiral anomaly [19] and magnetic spin Hall effect [20][21][22][23] makes them a very interesting playground for * krishnag@mat.ethz.ch investigating the interplay of topology, electron transport, and magnetism [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Time-Dependent Multistate Switching of Topological Antiferromagnetic Order in Mn3Sn

et al. 2022

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The manipulation of antiferromagnetic order by means of spin-orbit torques opens opportunities to exploit the dynamics of antiferromagnets in spintronic devices. In this work, we investigate the currentinduced switching of the magnetic octupole vector in the Weyl antiferromagnet Mn 3 Sn as a function of pulse shape, magnetic field, temperature, and time. We find that the switching behavior can be either bistable or tristable depending on the temporal structure of the current pulses. Time-resolved Hall effect measurements performed during the current pulsing reveal that Mn 3 Sn switching proceeds via a two-step demagnetization-remagnetization process caused by self-heating over a timescale of tens of nanoseconds followed by cooling in the presence of spin-orbit torques. Single-shot switching measurements with 50ps temporal resolution indicate that chiral spin rotation is either damped or incoherent in polycrystalline Mn 3 Sn. Our results shed light on the switching dynamics of Mn 3 Sn and prove the existence of extrinsic limits on its switching speed.

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“…It should be emphasized that such an effect is fundamentally different from the ordinary spin Hall effect (SHE) originating from SOC, [47] for the former is odd under time reversal (T), while the latter is even under T. Recently, similar results have been obtained for Mn 3 AN. [48] Although little experimental evidence for the predicted longitudinal spin-polarized currents has been put forward up to now, they indeed suggest a feasible antiferromagnetic version of the building blocks of conventional spintronics, such as spin-transfer torques (STTs), the giant magnetoresistance resistance (GMR) effect, and the tunneling magnetoresistance (TMR) effect. Very recently, these phenomena have been theoretically studied in detail, [49,50] which we will introduce later.…”

mentioning

confidence: 99%

“…Aside from GMR junctions, the noncollinear antiferromagnetic TMR effect, [46,48] a concept that was put forward years ago, might be another promising route. Very recently, noncol-linear antiferromagnetic TMR junctions, i.e., an insulating tunneling barrier sandwiched by two identical noncollinear antiferromagnetic electrodes, have been theoretically studied in detail.…”

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confidence: 99%

Noncollinear Antiferromagnetic Spintronics

Chen¹,

Qin²,

Yan³

et al. 2022

MatLab

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Antiferromagnetic spintronics is one of the leading candidates for next-generation electronics. Among abundant antiferromagnets, noncollinear antiferromagnets are promising for achieving practical applications due to coexisting ferromagnetic and antiferromagnetic merits. In this perspective, we briefly review the recent progress in the emerging noncollinear antiferromagnetic spintronics from fundamental physics to device applications. Current challenges and future research directions for this field are also discussed.

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Unconventional Robust Spin-Transfer Torque in Noncollinear Antiferromagnetic Junctions

Cited by 22 publications

References 42 publications

Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current

Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current

Time-Dependent Multistate Switching of Topological Antiferromagnetic Order in Mn3Sn

Noncollinear Antiferromagnetic Spintronics

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