Unconventional features of Ag epitaxy on the Si(111)7×7 surface

Mysliveček, Josef; Sobotík, P.; Ošt’ádal, Ivan; Jarolímek, T.; Šmilauer, P.

doi:10.1103/physrevb.63.045403

Cited by 56 publications

(48 citation statements)

References 23 publications

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“…The coarse grained KMC model implements the following growth scenario: (i) Random surface positions (HUCs) are selected for atoms impinging with rate F. To mimic the short-range ordering of Ag-object and the low value of coverage (see [5,6] for details) at RT, when thermally activated hopping is negligible, the transient mobility is implemented according to [6] as follows: Atoms deposited into a HUC are immediately moved to adjacent occupied HUC, if it exists, otherwise they stay with 100 % probability in F HUC and 95 % probability in U HUC (to (2) reproduce preference at RT) 1.…”

Section: Kmc Modelmentioning

confidence: 99%

“…Details of the model implementation were described in [6], simulations of larger islands growth will be presented elsewhere [8].…”

Section: Kmc Modelmentioning

confidence: 99%

“…We use the growth model developed in our previous studies and parameters obtained from KMC simulations [6,8,12]. We performed computer simulations to study the influence of deposition parameters (temperature and deposition rate) on island ordering and visualize it.…”

Section: Introductionmentioning

confidence: 99%

“…Growth of the identical clusters is mediated by the existence of particular magic sizes of atom clusters that are more stable than the others. In case of Tl [3], Sn [4] and Ag [5,6] more or less ordered island arrays were reported but magic clustering was not observed. Preparation of ordered structures requires a delicate control of deposition conditions.…”

Section: Introductionmentioning

confidence: 99%

“…Kinetic Monte Carlo simulation (KMC) of the growth represents an effective approach for theoretical study of important processes involved. We used the KMC simulations together with growth experiments for studying nucleation and heteroepitaxial growth of Ag on the Si(111)-(7×7) surface [5,6,7,8].The (7×7) reconstructed surface consists of triangular half-unit cells (HUCs), which represent potential wells for adsorbed atoms hopping on the surface [9,10]. Each HUC contains six Si adatoms of a top layer.…”

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Self-organized growth of Ag islands on Si(1 1 1)-(7 × 7)-optimization of an STM experiment by means of KMC simulations

et al. 2004

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A growth model and parameters obtained in our previous experimental (STM) and theoretical (Kinetic Monte Carlo simulations) studies of Ag/ Si(111)-(7×7) heteroepitaxy were used to optimise growth conditions (temperature and deposition rate) for the most ordered self-organized growth of Ag island arrays on the (7×7) reconstructed surface. The conditions were estimated by means of KMC simulations using the preference in occupation of half unit cells (HUCs) of F-type as a criterion of island ordering. Morphology of experimentally prepared island structures was studied by STM. High degree of experimentally obtained island ordering is compared with the simulated data and results are discussed with respect to the model and parameters used at the KMC simulations. IntroductionA lot of effort has been paid to prepare ordered arrays of metal nanoclusters because of interesting possible applications in the field of microelectronics. Reconstructed Si(111)-(7× 7) surface was used as a template for spontaneous ordering. Recently ordered arrays of In, Al, Ga identical clusters have been prepared [1,2]. Highly ordered arrays of identical bimetal clusters of In/Ag and In/Mn were also reported in [2]. Growth of the identical clusters is mediated by the existence of particular magic sizes of atom clusters that are more stable than the others. In case of Tl [3], Sn [4] and Ag [5,6] more or less ordered island arrays were reported but magic clustering was not observed. Preparation of ordered structures requires a delicate control of deposition conditions. Kinetics of self-ordering of clusters on the reconstructed surface depends on many parameters and theoretical description of a role of deposition conditions is difficult and still not available. Kinetic Monte Carlo simulation (KMC) of the growth represents an effective approach for theoretical study of important processes involved. We used the KMC simulations together with growth experiments for studying nucleation and heteroepitaxial growth of Ag on the Si(111)-(7×7) surface [5,6,7,8].The (7×7) reconstructed surface consists of triangular half-unit cells (HUCs), which represent potential wells for adsorbed atoms hopping on the surface [9,10]. Each HUC contains six Si adatoms of a top layer. The HUCs are of two types, one containing structural fault (FHUC), the other is unfaulted (UHUC) [11]. It results in different reactivities and consequently in preferential nucleation of Ag in FHUCs. The Ag adatom hopping between various adsorption positions within a HUC at room and higher temperatures is easy but the mobility of the Ag adatoms on the surface -important for growth processes -is determined by the hopping rate between HUCs (depends on barrier height). In a coarse grained model, we used for the simulations, the surface is represented by adsorption sites of two types (FHUCs, UHUCs) with different barrier heights. The preference in FHUC occupancy, P F , (ratio of number of FHUCs occupied by Ag clusters to number of all occupied HUCs) is determined by the barrier difference...

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Section: Kmc Modelmentioning

confidence: 99%

“…Details of the model implementation were described in [6], simulations of larger islands growth will be presented elsewhere [8].…”

Section: Kmc Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Self-organized growth of Ag islands on Si(1 1 1)-(7 × 7)-optimization of an STM experiment by means of KMC simulations

et al. 2004

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Nucleation and growth of Ge nanoclusters on the Si(111)-(7 × 7) surface studied by scanning tunneling microscopy

Zhang

Chen

et al. 2014

Surf. Interface Anal.

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Nucleation and growth of two-dimensional Ge nanoclusters on the Si(111)-(7 × 7) surface at elevated substrate temperatures have been studied using scanning tunneling microscopy. The uniformity of the Ge nanoclusters is improved with the increase of substrate temperature, and ordered Ge nanoclusters are formed on the faulted and unfaulted halves of (7 × 7) unit cell at substrate temperature of 200°C. It is proposed that the Ge nanoclusters consist of six Ge atoms with three on top of the center adatoms and others on the rest atoms within one half of a unit cell.

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