“…This finding has three implications: (i) it supports the basic validity of the underlying assumptions, (ii) it yields an effective length of 0.3 μm, to which the gated channel region contributes to PTE, and (iii) most importantly, the increasing domination of PTE over RSM for rising radiation frequency is a consequence of the change in the power dissipation profile alongside the graphene channel when the frequency increases. The penetration length Δ L to which the PTE contributes to the detector signal below the gate electrode is closely related to the electronic cooling length L c , ,, which scales sublinearly with the charge carrier mobility and determines the length scale over which the heated carriers (here, the carrier heating mainly occurs place in the antenna gap) cool down to the lattice temperature T L . For our low carrier mobility samples, where the mobility ranges from μ FE,h ≈ 1250 cm 2 /(V s) up to μ FE,e ≈ 1600 cm 2 /(V s), an electronic cooling length of L c,h ≈ 0.35 μm and L c,e ≈ 0.38 μm is predicted from theory .…”