Ultraviolet photoresponse properties of ZnO:N/p-Si and ZnO/p-Si heterojunctions

Zahedi, F.; Dariani, R.S.; Rozati, Seyed Mohammad

doi:10.1016/j.sna.2013.05.009

Cited by 34 publications

(12 citation statements)

References 33 publications

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“…The average crystallite size of ZnO films calculated from the (002) peak found to be 22.6 nm. The crystallite size was reported to be 27.453 nm for ZnO by Zahedi et al [24]. According to Ismail et al [25] the granular and polycrystalline structure of ZnO plays an important role in the electrical properties.…”

Section: Phase Identificationmentioning

confidence: 98%

Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

Kumar

Chand

2014

J Mater Sci: Mater Electron

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The Ag/n-ZnO/p-Si(100)/Al heterojunction diodes were fabricated by pulsed laser deposition of zinc oxide (ZnO) thin films on p-type silicon. The X-ray diffraction analysis shows the formation of ZnO thin film with hexagonal structure having strong (002) plane as preferred orientation. The energy band gap of ZnO films simultaneously deposited on quartz substrate was calculated from the measured UV-Visible transmittance spectra. High purity vacuum evaporated silver and aluminum thin films were used to make contacts to the n-ZnO and p-silicon, respectively. The current-voltage and capacitance-voltage characteristics of Ag/n-ZnO/p-Si(100)/Al heterostructures were measured over the temperature range of 80-300 K. The Schottky barrier height and ideality factor were determined by fitting of the measured current-voltage data into thermionic emission diffusion equation. It is observed that the barrier height decreases and the ideality factor increases with decrease of temperature and the activation energy plot exhibit non-linear behavior. This decrease in barrier height and increase in ideality factor at low temperature are attributed to the occurrence Gaussian distribution of barrier heights. The capacitance-voltage characteristics of Ag/n-ZnO/p-Si(100)/Al heterojunction diode were also studied over the wide temperature range. Capacitance-voltage data are used to estimate the barrier height and impurity concentration in n-type ZnO.

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Section: Phase Identificationmentioning

confidence: 98%

Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

Kumar

Chand

2014

J Mater Sci: Mater Electron

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“…ZnO-based structures have been applied in a variety of fields such as light emitting diodes, photo diodes [4], solar cells [5,6], gas sensor [7], surface acoustic wave devices [8], field effect transistor [9] and piezoelectric devices [10].…”

Section: Introductionmentioning

confidence: 99%

“…The electrical conductivity and thermal stability of ZnO thin films can be improved by doping of Al. Also the optical band gap of ZnO can be controlled by Al doping amount [4]. Hence, it is important to investigate the influence of the dopants on the structural, optical, and electrical properties of ZnO nanostructure prior to employing these materials in practical applications [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…Hence, it is important to investigate the influence of the dopants on the structural, optical, and electrical properties of ZnO nanostructure prior to employing these materials in practical applications [6,7]. Some researchers are investigated the effect of Al doping value on different properties of ZnO nanostructure grown by different deposition techniques so far, including molecular beam epitaxy [4], hydrothermal method [11], chemical vapor deposition [16], pulsed laser deposition [17], sol-gel process [5], magnetron sputtering [18], electro deposition [19], and spray pyrolysis [4,20]. Among them, spray pyrolysis technique is considered as an inexpensive, reproducible and particularly useful method for the growth of nanostructures on large area substrates at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Influence of doping behavior of Al on nanostructure, morphology and optoelectronic properties of Al Doped ZnO thin film grown on FTO substrate

Shirazi

Dariani

Toroghinejad

2016

J Mater Sci: Mater Electron

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Al doped ZnO nanostructures deposited on FTO glass substrate by spray pyrolysis method with different Al doping levels (0-5 wt%). The structural, morphological, optical and electrical properties of fabricated samples were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), photoluminescence (PL), four point probe, and UV-Vis spectroscopy. The results obtained from XRD analysis indicated that the growth preferred orientation of the ZnO thin films strongly depend on Al doping value. Also the crystalline plane distance and grain size decreased while free electron density and energy band gap enhanced as the Al doping value increased. PL analysis revealed the Near Band emission in PL spectra shifts to shorter wavelengths and Fermi surface shifts to conduction band with increasing the Al content. Electrical measurements illustrated that the resistivity reduces with doping Al into ZnO and reaches to minimum value for 3 % Al doped sample. Also the surface morphology and surface roughness of samples deposited by various Al doping values studied by FESEM and AFM analyzes.

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“…Photoresponse of ZnO thin films, which were fabricated by hydrothermal method [4,5], pulsed laser deposition [6], magnetron sputtering [7], spray pyrolysis deposition method [8], sol-gel method [9] and electrochemical deposition [10], has been investigated. Among numerous deposition techniques, hydrothermal method has become attractive for fabricating ZnO owing its simplicity, cost-efficiency, large-area deposition and relative low synthesis temperature.…”

Section: Introductionmentioning

confidence: 99%

Effect of ammonia on morphology, wettability and photoresponse of ZnO nanorods grown by hydrothermal method

Yan

Zhao

et al. 2015

Journal of Alloys and Compounds

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Ultraviolet photoresponse properties of ZnO:N/p-Si and ZnO/p-Si heterojunctions

Cited by 34 publications

References 33 publications

Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

Influence of doping behavior of Al on nanostructure, morphology and optoelectronic properties of Al Doped ZnO thin film grown on FTO substrate

Effect of ammonia on morphology, wettability and photoresponse of ZnO nanorods grown by hydrothermal method

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