2022
DOI: 10.1016/j.jnoncrysol.2021.121325
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Ultraviolet luminescence of polycyclic aromatic hydrocarbons in partially consolidated sol-gel silica glasses

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Cited by 4 publications
(6 citation statements)
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“…Therefore, we can conclude that excessive boron addition leads to a more disordered SiO 2 network. The decrease of transmittance in 1200 and 1400 nm is attributed to vibrational overtones of C–H bonds by Pogareva et al [ 48 ], and it is possible that some organic material is still present in the samples from the synthesis, as described in [ 22 ].…”
Section: Resultsmentioning
confidence: 99%
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“…Therefore, we can conclude that excessive boron addition leads to a more disordered SiO 2 network. The decrease of transmittance in 1200 and 1400 nm is attributed to vibrational overtones of C–H bonds by Pogareva et al [ 48 ], and it is possible that some organic material is still present in the samples from the synthesis, as described in [ 22 ].…”
Section: Resultsmentioning
confidence: 99%
“…In this study, Sr 0.97 Eu 0.01 Dy 0.02 Al 2-x B x O 4 /SiO 2 composite materials samples were synthesized by using the sol–gel method following the procedure described by Skuja et al [ 22 ]. Additional steps were added to this synthesis process to obtain 2 wt% SrAl 2 O 4 :Eu, Dy, and B in SiO 2 glass.…”
Section: Methodsmentioning
confidence: 99%
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“…In addition, by analyzing samples with different pore sizes we rationalized that the emitting centers can be stabilized in slightly different geometries with different optical properties, since the increase of the Si-Si distance in larger pore diameter samples produces a slight blue shift of the emissions. However, the assignment was recently questioned [51], reporting some spectra with vibrational features upon the emission whose contribution was increased by annealing in O 2 or H 2 at quite high temperatures. Since MS can contain residual carbon species due to the surfactant exploited during the synthesis or even due to the adsorption of CO 2 from the atmosphere, the formation of some PAHs was considered by the authors.…”
Section: Exploiting Optical Properties Of Void Msmentioning
confidence: 99%
“…This shift is too significant to be assigned to only ODC(I). The shift of the 4.3 eV peak in principle can be interpreted as the result of the formation of additional peaks at E < 4 eV, which can be assigned to specific carbon containing residues [59][60][61][62][63]. In the general case, the formation of (≡Si-Si≡) type defects should occur due to the destruction of certain bonds of Si atoms.…”
Section: Ethylene Bridged Pmomentioning
confidence: 99%