In the field of nanofabrication, the combination of conventional lithographic techniques with chemical processes has potential for patterning surfaces with nanometer-scale resolution. The fusion of these technologies also addresses another important aspect of this field-the parallel creation of hierarchical structures that interface components on the 1-100 nm range with micrometer-scale structures. Key to the application and adoption of these hybrid strategies is showing their compatibility with, and advantages over, commercially used methods (i.e., photolithography). As reported here, aligned microstructures with precisely defined nanometerscale spacing and edge resolution were produced by combining photolithography with molecular rulers-selectively placed, self-assembled multilayers. Photolithography was used to define the structures, and self-assembled molecular-ruler resists precisely tailored the structures' spacings. This work demonstrates the compatibility and robustness of hybrid strategies employing molecular rulers with conventional photolithographic fabrication schemes and processes.Other methods, such as soft lithography, [1,2] scanning probe nanolithography, [3][4][5] nanosphere lithography, [6,7] and self-assembled monolayer etch resists, [8][9][10] also utilize the approach of combining traditional fabrication methods with chemical processes. The molecular-ruler process is advantageous for patterning precise nanometer-scale spacings because of its high resolution and precision, selective deposition, compatibility with different forms of lithographic processing, low production cost, parallel nature, and mild processing conditions (ambient temperature and pressure). Molecular-ruler nanolithography shows great promise for extremely high resolution patterning. [11][12][13][14][15] . Schematic (not drawn to scale) and results of the molecular-ruler assembly process. a) Lithographically defined gold parent structure on an oxidized Si wafer. b) Molecular rulers, alternating layers of a,xmercaptoalkanoic acid and Cu 2+ ions, are selectively deposited on the parent structure, forming a molecular resist to mask the parent structure. c) Daughter metal is evaporated. d) Chemical lift-off of the molecular resist yields precisely defined spacings between the parent and daughter structures. e) Field-emission scanning electron microscopy image of parent (P) and daughter (D) structures separated by a 30 nm gap created by the molecular-ruler process with the assembly of 15 molecular-ruler layers of 16-mercaptohexadecanoic acid (∼ 2 nm each) and Cu 2+ from Cu(ClO 4 ) 2 . The parent structure was patterned lithographically and formed by evaporation of 10 nm thick Cr and 80 nm thick Au. The daughter structure was formed by evaporation of 10 nm thick Cr and 30 nm thick Au.