2000
DOI: 10.1063/1.1316066
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Ultraviolet lithography of self-assembled monolayers for submicron patterned deposition

Abstract: We report on a lithographic technique that uses self-assembled monolayers ͑SAMs͒ as a resist to fabricate patterned, chemically functionalized surfaces. Large area line, square, and triangular patterns with a periodicity of 532 nm were generated exposing SAMs of hydrophobic or hydrophilic alkanethiolates to an ultraviolet laser interference pattern at 193 nm for only a few minutes ͑corresponding to ϳ16 J/cm 2 ͒ followed by the immersion into an alternating thiol. Patterned films of CaCO 3 , Zn͑OH͒ 2 , and poly… Show more

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Cited by 59 publications
(50 citation statements)
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“…The resulting grating pattern defines parallel grooves in a resist or bleaches a self-assembled monolayer deposited on the substrate. [32] Interference lithography can be adapted to various setups and light sources. A simple setup such as a Lloyd's-mirror configuration with a HeCd laser (k = 325 nm)…”
Section: Direct-write Lithographymentioning
confidence: 99%
“…The resulting grating pattern defines parallel grooves in a resist or bleaches a self-assembled monolayer deposited on the substrate. [32] Interference lithography can be adapted to various setups and light sources. A simple setup such as a Lloyd's-mirror configuration with a HeCd laser (k = 325 nm)…”
Section: Direct-write Lithographymentioning
confidence: 99%
“…Photolithography was used to define the structures, and self-assembled molecular-ruler resists precisely tailored the structures' spacings. This work demonstrates the compatibility and robustness of hybrid strategies employing molecular rulers with conventional photolithographic fabrication schemes and processes.Other methods, such as soft lithography, [1,2] scanning probe nanolithography, [3][4][5] nanosphere lithography, [6,7] and self-assembled monolayer etch resists, [8][9][10] also utilize the approach of combining traditional fabrication methods with chemical processes. The molecular-ruler process is advantageous for patterning precise nanometer-scale spacings because of its high resolution and precision, selective deposition, compatibility with different forms of lithographic processing, low production cost, parallel nature, and mild processing conditions (ambient temperature and pressure).…”
mentioning
confidence: 99%
“…Using a phase mask, arrays of lines with 100 nm in ca. 1 min can be produced [131] . Using laser beams, thermal desorption on the SAM can be realized [132] , which can be further used to pattern SAMs.…”
Section: Patterning Of Sam Smentioning
confidence: 99%