Ultraviolet light emission and excitonic fine structures in ultrathin single-crystalline indium oxide nanowires

Zhang, Wei; Guo, Dongyu; Liu, B.; Chen, R.; Wong, L. M.; Yang, Weifeng; Wang, Xinbo; Sun, Handong; Wu, Tom

doi:10.1063/1.3284654

Cited by 47 publications

(32 citation statements)

References 31 publications

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“…8c at the low electron temperature range); correspondingly, Δ ɛ ′( ω ) peaks at higher energy, similar to the behaviour of Δ ɛ ′( ω ) observed at lower pump fluences for the fast component. We note that various thermal effects, including a possible decrease of band gap with an increased lattice temperature 39 , together with elastic response (such as thermal expansion) of ITO can contribute to Δ ɛ ′( ω ) of the slow component; therefore further theoretical modelling was not attempted due to the poorly understood temperature dependent band structure and strain dependence of the permittivity that is outside the scope of the current study.…”

Section: Resultsmentioning

confidence: 99%

Large optical nonlinearity of ITO nanorods for sub-picosecond all-optical modulation of the full-visible spectrum

et al. 2016

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Nonlinear optical responses of materials play a vital role for the development of active nanophotonic and plasmonic devices. Optical nonlinearity induced by intense optical excitation of mobile electrons in metallic nanostructures can provide large-amplitude, dynamic tuning of their electromagnetic response, which is potentially useful for all-optical processing of information and dynamic beam control. Here we report on the sub-picosecond optical nonlinearity of indium tin oxide nanorod arrays (ITO-NRAs) following intraband, on-plasmon-resonance optical pumping, which enables modulation of the full-visible spectrum with large absolute change of transmission, favourable spectral tunability and beam-steering capability. Furthermore, we observe a transient response in the microsecond regime associated with slow lattice cooling, which arises from the large aspect-ratio and low thermal conductivity of ITO-NRAs. Our results demonstrate that all-optical control of light can be achieved by using heavily doped wide-bandgap semiconductors in their transparent regime with speed faster than that of noble metals.

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Section: Resultsmentioning

confidence: 99%

Large optical nonlinearity of ITO nanorods for sub-picosecond all-optical modulation of the full-visible spectrum

et al. 2016

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“…For as-grown ZnO nanowires, with temperature increase the intensity of D 0 Xdecrease quickly and totally disappear at temperature~100 K, and FX exists for the whole temperature range (50-100 K). It also can be seen that the DAP emission and its LO phonon replicas show a slight blue shift with temperature, which is the characteristic for DAP [24]. As for 200 W Ar plasma treated ZnO nanowires, only one peak exists during the whole temperature range, and this peak shows a red shift with temperature.…”

Section: Resultsmentioning

confidence: 71%

“…As it is shown in Fig. 3a, the dominated emission of the sample comes from D 0 X located at 3.363 eV [24,25]. At the higher energy region, the peak at 3.377 eV can be ascribed to the free exciton (FX) emission and its longitudinal optical (LO) phonon replica can also be clearly identified.…”

Section: Resultsmentioning

confidence: 77%

Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment

Tang

Lin

et al. 2019

Nanoscale Res Lett

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ZnO nanowires play a very important role in optoelectronic devices due to the wide bandgap and high exciton binding energy. However, for one-dimensional nanowire, due to the large surface to volume ratio, surface traps and surface adsorbed species acts as an alternate pathway for the de-excitation of carriers. Ar plasma treatment is a useful method to enhance the optical property of ZnO nanowires. It is necessary to study the optical properties of ZnO nanowires treated by plasma with different energies. Here, we used laser spectroscopy to investigate the plasma treatments with various energies on ZnO nanowires. Significantly improved emission has been observed for low and moderate Ar plasma treatments, which can be ascribed to the surface cleaning effects and increased neutral donor-bound excitons. It is worth mentioning that about 60-folds enhancements of the emission at room temperature can be achieved under 200 W Ar plasma treatment. When the plasma energy exceeds the threshold, high-ion beam energy will cause irreparable damage to the ZnO nanowires. Thanks to the enhanced optical performance, random lasing is observed under optical pumping at room temperature. And the stability has been improved dramatically. By using this simple method, the optical property and stability of ZnO nanowires can be effectively enhanced. These results will play an important role in the development of low dimensional ZnO-based optoelectronic devices.

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“…However, certain details of the growth mechanism are still unclear. The deposition temperature could be ranging from 450 to 900 °C even for the same precursor [ 11 , 12 ]. The relationship between morphology and different growth conditions has not been clarified.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity

Chen

Yang

2020

Nanomaterials

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In this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor–liquid–solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the length of the nanowires could be over 30 μm, confirmed by field-emission scanning electron microscopy (SEM). Characterization was conducted with X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence spectrum (PL). High-resolution TEM studies confirm that the grown nanowires were single crystalline c-In2O3 nanowires of body-centered cubic structures. The room temperature PL spectrum shows a strong peak around 2.22 eV, originating from the defects in the crystal structure. The electrical resistivity of a single indium oxide nanowire was measured to be 1.0 × 10−4 Ω⋅cm, relatively low as compared with previous works, which may result from the abundant oxygen vacancies in the nanowires, acting as unintentional doping.

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Ultraviolet light emission and excitonic fine structures in ultrathin single-crystalline indium oxide nanowires

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Cited by 47 publications

References 31 publications

Large optical nonlinearity of ITO nanorods for sub-picosecond all-optical modulation of the full-visible spectrum

Large optical nonlinearity of ITO nanorods for sub-picosecond all-optical modulation of the full-visible spectrum

Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment

Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity

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