Ultraviolet-light-driven photoresponse of chemical vapor deposition grown molybdenum disulfide/graphene heterostructured FET

Solar-blind ultraviolet detection based on TiO2 nanoparticles decorated graphene field-effect transistors

“…Using the photoresponsivity of 60.3 A/W, a D* = 1.24 × 10 11 jones (1 jones = 1 cm Hz 1/2 W −1 ) is obtained, which is comparable to the best performances of reported graphene-based UV photodetectors [39,54]. Importantly, the photoresponsivity and detectivity can be further enhanced at lower incident laser powers [27,29,53]. Temporal photoresponses of the TiO 2 NPs decorated GFET under different gate bias voltages are plotted in Figure 5A.…”

“…By spin-coating a layer of titanium dioxide (TiO 2 ) nanoparticles (NPs, size, 3-5 nm) [24] or Ag NPs [25] on such devices for UV light absorption, the photoresponsivity could be further increased by up to ~100%. To further increase the photoresponsivity of graphene-based UV photodetectors, graphene membranes were integrated with various semiconducting light harvesters, such as transition-metal dichalcogenides [28,29], fullerene (C 60 ) [30], organic molecules [31], and quantum-dots (QDs) [32,33], based on the photogating effect. For example by synthesizing a layer of silicon QDs doped with boron on a back-gated graphene field-effect transistor (GFET), a photoresponsivity up to ~10 8 A/W and a detectivity of ~10 12 Jones were obtained at 375 nm [33].…”

Self‐Powered Low‐Cost UVC Sensor Based on Organic‐Inorganic Heterojunction for Partial Discharge Detection

“…As shown in Table 3, there have been a limited number of reports in which the solution process with self-powered operation has been implemented for high-performance sensors. [32,[36][37][38][39][40][41][42] In our study, the maximum responsivity of the F8BT/ZnO UVC sensor was 20 mA W −1 under the self-powered mode, which exceeds the results reported in previous studies. The reason for high photo-responsivity could be the based on a combination of various physical phenomena in our study.…”

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

“…A photoresponsivity of 3.34 Â 10 3 A W À1 and a detectivity of 1.004 Â 10 12 Jones have been observed for graphene/MoS 2 hybrid structure-based FETs. 227 The phototransistor fabricated from multilayer MoS 2 using graphene source/drain electrodes showed a high photoresponsivity of 1 Â 10 4 A W À1 in the wavelength range of 470-600 nm. 228 Chen et al 229 developed n-n-type vdWHs using multilayer MoS 2 coated with a layer of nitrogen-doped graphene QDs (N-GQDs) to complement each other with their strong characteristics to improve the carrier mobility.…”

“…High photoresponsivities ranging from 10 3 A W À1 to 10 10 A W À1 have been observed for the graphene/MoS 2 hybrid structurebased photodetectors. 126,[226][227][228] Han et al 300 developed photodetectors using CVD-grown MoS 2 monolayers with both Au and graphene electrodes. MoS 2 photodetectors with graphene electrodes showed the current I on /I off ratio of 1 Â 10 5 and mobility of 0.48 cm 2 V À1 s À1 compared to 2 Â 10 3 and 0.1 cm 2 V À1 s À1 with gold electrodes.…”