Ultraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC( H) films using comb capacitor structure

Kim, Chang Young; Navamathavan, R.; Lee, Heang Seuk; Woo, Jiwon; Hyun, Myung Taek; Lee, Kwang-Man; Jeung, Won Young; Choi, Chi Kyu

doi:10.1016/j.tsf.2011.04.058

Cited by 21 publications

(15 citation statements)

References 19 publications

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“…Porous low-k dielectric materials can be produced by either spin-on technology or chemical vapor deposition (CVD) method [14,15,[17][18][19][20]. In the CVD method, the deposition rate of CVD method is strongly dependent of the deposition temperature.…”

Section: Deposition Methods For Porous Low-k Materialsmentioning

confidence: 99%

“…Following, the sacrificial organic polymer in the deposited low-k dielectric material is removed by ultraviolet (UV)-assisted thermal curing at a temperature range of 300-450°C in order to form the pores in the film. The precise composition and porosity depend on the type of precursor molecules, the matrix/porogen ratio used during deposition, and the curing conditions [17,18].…”

Section: Gate and Interconnect Delay With Technological Generation (Imentioning

confidence: 99%

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Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Cheng¹,

Lee²

2020

Nanofluid Flow in Porous Media

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To provide high speed, low dynamic power dissipation, and low cross-talk noise for microelectronic circuits, low-dielectric-constant (low-k) materials are required as the inter-and intra-level dielectric (ILD) insulator of the back-end-of-line interconnects. Porous low-k materials have low-polarizability chemical compositions and the introducing porosity in the film. Integration of porous low-k materials into microelectronic circuits, however, poses a number of challenges because the composition and porosity affected the resistance to damage during integration processing and reduced the mechanical strength, thereby degrading the properties and reliability. These issues arising from porous low-k materials are the subject of the present chapter.

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Section: Deposition Methods For Porous Low-k Materialsmentioning

confidence: 99%

Section: Gate and Interconnect Delay With Technological Generation (Imentioning

confidence: 99%

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Cheng¹,

Lee²

2020

Nanofluid Flow in Porous Media

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“…Low-k materials can be divided into several categories: silica-based, silsesquioxane (SSQ)based, organic polymers, and amorphous carbon low-k materials [17][18][19][20]. The last three categories have integration issue due to the weak mechanical strength; therefore, they are not officially production in the semiconductor industry.…”

Section: Low-k Materialsmentioning

confidence: 99%

Plasma Damage on Low-k Dielectric Materials

Cheng¹,

Lee²,

Haung³

2019

Plasma Science and Technology - Basic Fundamentals and Modern Applications

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Low dielectric constant (low-k) materials as an interconnecting insulator in integrated circuits are essential for resistance-capacitance (RC) time delay reduction. Plasma technology is widely used for the fabrication of the interconnects, such as dielectric etching, resisting ashing or stripping, barrier metal deposition, and surface treatment. During these processes, low-k dielectric materials may be exposed to the plasma environments. The generated reactive species from the plasma react with the low-k dielectric materials. The reaction involves physical and chemical effects, causing degradations for lowk dielectric materials. This is called "plasma damage" on low-k dielectric materials. Therefore, this chapter is an attempt to provide an overview of plasma damage on the low-k dielectric materials.

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“…For future microelectronic applications in 45 nm and below technology, porous low-k dielectric materials with a dielectric constant value of lower than 2.8 or less are required as inter-level insulators to reduce the resistance-capacitance delay and power consumption, and to increase the signal to noise ratio [1][2][3]. However, the integration of porous low-k dielectrics raises such challenges as reduced mechanical strength, thermal instability and ease of adsorption of moisture [4,5].…”

Section: Introductionmentioning

confidence: 99%