Ultraviolet glow of Lu3Ga5O12:Bi3+ phosphor in indoor lighting

Atomic Layer Deposition and Electroluminescence of Er-Doped Polycrystalline Lu3Ga5O12 Nanofilms for Silicon-Based Optoelectronics

“…These EL emissions are well assigned to the characteristic radiative intra-4 f transitions of Er 3+ ions, with the strongest peak ascribing to the 4 I 13/2 → 4 I 15/2 transition. These weaker shoulder peaks originate from different anti-Stokes or Stokes levels split by the spin–orbit interaction from the crystal field distortion and internal lattice vibrations within the garnet structures under both optical (PL) and electrical (EL) excitations. ,,, A slight difference in the main emission peaks could be seen from the EL spectra in comparison with the previously reported devices based on Er-doped garnet nanofilms including LuAG and YGG (Figure S5c); for the LuAG device, the shoulder peak at ∼1513 nm is more prominent, , showing the change of lattice constants and adjacent ionic environment due to the substitution by Ga 3+ ions. Although the doped Er 3+ ions in these garnet grains should occupy the same lattice site and replace the compositional RE 3+ ions, minor differences originating from the various electronegativities and coordination bond lengths of the component ions are reflected in the fine structure of the spectrum.…”

“…The integration of photonics with microelectronics for the future advancement in information technology relies on the achievement of efficient silicon-based light sources. − Among the various routes, the sharp 1.53 μm emission from erbium (Er) ions is of particular interest in optoelectronics and has been researched for a long time, − while electroluminescence (EL) devices based on Er-doped host materials are still worth exploring to tackle the current drawbacks of low efficiency and instability. Garnet crystals are desirable for optoelectronic applications due to their attractive properties including good transparency, isotropy, high thermal conductivity, and stability. , Er-doped garnet crystals have demonstrated excellent potential in near-infrared (NIR) optical communication and pumping media for laser sources, , among which Lu 3 Ga 5 O 12 (LuGG) is of special advantages since the component Lu 3+ ion has a complete 4 f orbital ([Xe]­4 f 14 ) that rules out the potential non-radiative recombination routes including excited-state absorption, cross-relaxation, and upconversion. − Due to the small differences in both ionic radius and atomic mass, substitution of Lu 3+ ions by other rare-earth (RE) ions is quite easy and beneficial to suppress clustering and achieve high excitability; , thus, Er-doped LuGG (LuGG:Er) should possess low distortion of the crystal lattice and a high effective dopant concentration. Additionally, LuGG possesses a relatively low phonon energy (∼765 cm –1 ) that makes it a promising medium for the NIR emissions from Er 3+ ions. , Previous theoretical investigations on energy levels and transition dipole strengths have manifested that the LuGG host is more suitable to improve lasing or luminescence performances with respect to other garnets. ,− Until recently, polycrystalline ceramics have been mainly used in the research concerning RE-doped LuGG by high-temperature solid-state synthesis, nanomaterials by wet-chemical methods, or single crystals grown from the melt, with the applications mostly limited to optical excitation. − It is almost impossible for these methods to deposit silicon-based LuGG:Er nanofilms for the fabrication of integrated light-emitting devices, which could realize the monolithic integration of optoelectronic components in Si chips through the mature microelectronic techniques.…”

“…7,8 Er-doped garnet crystals have demonstrated excellent potential in near-infrared (NIR) optical communication and pumping media for laser sources, 9,10 among which Lu 3 Ga 5 O 12 (LuGG) is of special advantages since the component Lu 3+ ion has a complete 4f orbital ([Xe]4f 14 ) that rules out the potential non-radiative recombination routes including excited-state absorption, cross-relaxation, and upconversion. 11−14 Due to the small differences in both ionic radius and atomic mass, substitution of Lu 3+ ions by other rareearth (RE) ions is quite easy and beneficial to suppress clustering and achieve high excitability; 15,16 thus, Er-doped LuGG (LuGG:Er) should possess low distortion of the crystal lattice and a high effective dopant concentration. Additionally, LuGG possesses a relatively low phonon energy (∼765 cm −1 ) that makes it a promising medium for the NIR emissions from Er 3+ ions.…”

Tunable luminescence from Bi3+ sensitized La2Zr2O7:Eu3+ red nanophosphors for display applications

“…1 S 0 of Bi 3+ , when excited at 310 nm. [46,47] Figure 5d depicts the lifetime decay curves of Bi 3+ doped samples. The emission intensity at 460 nm increases initially as the Bi 3+ concentrations increase and reaches a maximum for 0.5 at% Bi 3+ , then declines for higher concentrations; this is caused by the concentration quenching effect.…”

Ambient light stimulation enabling intense and long-lasting ultraviolet-C persistent luminescence from Pr3+-doped YBO3 in bright environments

“…[1][2][3] On the other hand, photostimulated luminescence (PSL), also known as optically stimulated luminescence (OSL), is defined as a special optical phenomenon in which the luminescence intensity can be enhanced when the pre-irradiated phosphors are subjected to a suitable light stimulus. [4][5][6][7][8][9][10][11] Upon monochromatic light illumination, the deep-trapped electrons that cannot be effectively thermally activated at room temperature can be photo-released to the conduction band and then recombined with the emitting center, resulting in intense PSL compared to the very weak or no light emission in darkness. [12][13][14][15][16] To date, PSL materials have been well studied and have great potential for exciting applications in many important fields owing to their unique luminescence characteristics, such as optical data storage, security encryption, biomedical science, etc.…”