Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes

Xu, Hai; Liu, Y. C.; Liu, Y. X.; Xu, Changshan; Shao, Changlu; Mu, R.

doi:10.1007/s00340-005-1790-9

Cited by 79 publications

(45 citation statements)

References 18 publications

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“…There has also been a controversy about whether the emission is from the n-ZnO side [147,376] or the p-GaN side [372,377]. In reality, the hole concentration in the Mg doped p-GaN substrate (~10 18 cm -3…”

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

“…Each emission band corresponded to a particular recombination process [374]. The near-UV emission band centered at around 400 nm was attributed to the near-band-edge emission in ZnO nanowires originating from the recombination of ZnO free and bound excitons [377,380]. Whereas the redshifted violet emission band centered at about 430 nm was ascribed to the transitions from the conduction band or shallow donors to deep Mg acceptor levels in the p-GaN thin film substrate [372,377,380].…”

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

“…The near-UV emission band centered at around 400 nm was attributed to the near-band-edge emission in ZnO nanowires originating from the recombination of ZnO free and bound excitons [377,380]. Whereas the redshifted violet emission band centered at about 430 nm was ascribed to the transitions from the conduction band or shallow donors to deep Mg acceptor levels in the p-GaN thin film substrate [372,377,380]. The blue emission at around 460 nm was assigned to the radiative interfacial recombination of the electrons from n-ZnO and holes from p-GaN [380][381][382].…”

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

“…Therefore, a high quality interface is required in order to obtain high efficiency LEDs. The weak red emission at around 790 nm comes from the native deep level point defects (oxygen vacancies and zinc interstitials) in ZnO nanowires [377]. It should be noted that the emission spectra could be changed by thermal annealing [380].…”

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

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One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, positioncontrolled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

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Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

Section: Inorganic Heterojunction Ledsmentioning

confidence: 99%

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One-dimensional ZnO nanostructures: Solution growth and functional properties

2011

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“…The near-UV emission band centered at around 400 nm is attributed to the near band edge (NBE) emission in ZnO nanowires that originates from the recombination of ZnO free and bound excitons. [ 18,19 ] Whereas the red shifted violet emission band centered at about 430 nm is ascribed to the transitions from the conduction band or shallow donors to deep Mg acceptor levels in the p-GaN thin fi lm substrate. [ 5 , 18,19 ] The blue emission around 460 nm comes from the radiative interfacial recombination of the electrons from n-ZnO and holes from p-GaN.…”

Section: Doi: 101002/adma201002134mentioning

confidence: 99%

Ordered Nanowire Array Blue/Near‐UV Light Emitting Diodes

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Progress in Piezo‐Phototronic‐Effect‐Enhanced Light‐Emitting Diodes and Pressure Imaging

et al. 2015

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Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non-central symmetric crystal structures. The three-way coupling of semiconductor properties, piezoelectric polarization and optical excitation in ZnO, GaN, CdS and other piezoelectric semiconductors leads to the emerging field of piezo-phototronics. This effect can efficiently manipulate the emission intensity of light-emitting diodes (LEDs) by utilizing the piezo-polarization charges created at the junction upon straining to modulate the energy band diagrams and the optoelectronic processes, such as generation, separation, recombination and/or transport of charge carriers. Starting from fundamental physics principles, recent progress in piezo-phototronic-effect-enhanced LEDs is reviewed; following their development from single-nanowire pressure-sensitive devices to high-resolution array matrices for pressure-distribution mapping applications. The piezo-phototronic effect provides a promising method to enhance the light emission of LEDs based on piezoelectric semiconductors through applying static strains, and may find perspective applications in various optoelectronic devices and integrated systems.

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Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes

Cited by 79 publications

References 18 publications

One-dimensional ZnO nanostructures: Solution growth and functional properties

One-dimensional ZnO nanostructures: Solution growth and functional properties

Ordered Nanowire Array Blue/Near‐UV Light Emitting Diodes

Progress in Piezo‐Phototronic‐Effect‐Enhanced Light‐Emitting Diodes and Pressure Imaging

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