Ultraviolet-C Photoresponsivity Using Fabricated TiO2 Thin Films and Transimpedance-Amplifier-Based Test Setup

Abstract

We report on fabricated titanium dioxide (TiO2) thin films along with a transimpedance amplifier (TIA) test setup as a photoconductivity detector (sensor) in the ultraviolet-C (UV-C) wavelength region, particularly at 260 nm. TiO2 thin films deposited on high-resistivity undoped silicon-substrate at thicknesses of 100, 500, and 1000 nm exhibited photoresponsivities of 81.6, 55.6, and 19.6 mA/W, respectively, at 30 V bias voltage. Despite improvements in the crystallinity of the thicker films, the decrease in photocurrent, photoconductivity, photoconductance, and photoresponsivity in thicker films is attributed to an increased number of defects. Varying the thickness of the film can, however, be leveraged to control the wavelength response of the detector. Future development of a chip-based portable UV-C detector using TiO2 thin films will open new opportunities for a wide range of applications.

Porosity-dependent photoelectrochemical activity of double-layered TiO2 thin films deposited by spin-coating method

“…Metal oxide-based semiconductor thin lms are frequently employed in industrial applications due to their versatility, simplicity of fabrication, abundance, and low cost. Among them, TiO 2 thin lms are particularly popular because they can be utilized for the development of thin lm-based solar cells, 1,2 gas sensors, 3,4 UV detection, 5,6 UV screening and protection of solar cells, 7 superhydrophilic coatings, 8,9 photocatalytic degradation of organic pollutants, 10,11 photoelectrochemical (PEC) water splitting, 12,13 etc. In general, the efficiency of solar cells, gas sensing devices, photocatalytic, and photoelectrochemical devices is strongly dependent on interfacial contact area, i.e.…”

Influence of Annealing on Thin Film/Substrate Interface and Vacuum Ultraviolet Photoconductivity of Neodymium Fluoride Thin Films

“…[13,14] Consequently, wide bandgap (WBG) semiconductors, such as aluminum nitride (AlN), boron nitride (BN), zinc oxide (ZnO), magnesium oxide (MgO), and titanium dioxide (TiO 2 ), as well as diamond have attracted extensive research efforts for the development of VUV photodetectors. [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] Despite the improved radiation hardness of WBG semiconductor-based detectors compared to silicon-based detectors, their bandgaps still lie in the UV region, and some degradation is therefore expected, especially during long-term operation. In contrast, wide bandgap fluoride-based detectors have recently emerged.…”

Physical Properties of Cu, Co, and Zn doped TiO2 nanocrystalline thin films prepared using spray pyrolysis

“…TiO 2 is a versatile material that has demonstrated significant contributions in various fields of application. It has been successfully utilized in gas sensing [1,2], UV sensors [3,4], solar cells [5,6], transistors [7,8], photocatalysis [9,10], and wastewater treatment [11]. The extensive range of applications highlights the exceptional properties of TiO 2 and underscores the critical importance of depositing high-quality TiO 2 nanostructures or thin films.…”