Ultraviolet avalanche photodiode in CMOS technology

Pauchard, A.; Rochas, A.; Randjelović, Z.; Besse, P.‐A.; Popović, R.S.

doi:10.1109/iedm.2000.904417

Cited by 20 publications

(20 citation statements)

References 10 publications

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“…An avalanche photodiode integrated in a CMOS process used a modulation-doped n-well to avoid edge breakdown at the reverse bias of about 20 V [3]. In the standard CMOS process used, the avalanche photodiodes (APD) had a rather moderate responsivity of about 4.6A/W at 430 nm [3]. Another disadvantage of that in [3] is that a reverse bias of 19.5 V was necessary.…”

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confidence: 99%

PNP pin phototransistor with modulation-doped base

et al. 2010

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confidence: 99%

PNP pin phototransistor with modulation-doped base

et al. 2010

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“…The gain-bandwidth Manuscript product of 280 GHz was achieved [13]. The other possible application of the CMOS-APD is Blu-ray systems [15]- [17]. In Blu-ray systems, a laser diode emitting at 400 nm wavelength range is used as a light source, and a quadrant Si PIN photodiode (PIN-PD) is used for photodetection as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…Since the data rate for 1× readout speed is 36 Mbps, 12× readout speed, for example, is 432 Mbps, which requires at least 200 MHz bandwidth for photodiodes. In [15], avalanche photodiodes were fabricated and were characterized in 300 ∼ 1000 nm wavelength range. At 430 nm wavelength, the responsivity is 0.18 A/W at zero bias voltage and is increased to 4.6 A/W at 19.1 V bias voltage due to avalanche amplification, which corresponds to the avalanche gain of about 25.…”

Section: Introductionmentioning

confidence: 99%

High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region

Iiyama

Minamikawa

Gyobu

et al. 2018

IEICE Trans. Electron.

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SUMMARYQuadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18 µm CMOS process, and were characterized at 405 nm wavelength for Blu-ray applications. The size of each APD element is 50 × 50 µm 2 . The dark current was 10 pA at low bias voltage, and low crosstalk of about −80 dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1 A/W at low bias voltage, the responsivity is enhanced to more than 1 A/W at less than 10 V bias voltage due to avalanche amplification. The wide bandwidth of 1.5 GHz was achieved with the responsivity of more than 1 A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system.

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“…Consequently, it becomes very difficult to collect the photogenerated carriers across silicon devices and thus to generate electrical energy under UV illumination. A variety of approaches have been investigated to enhance the responsivity of silicon in UV, e.g., by using shallower junctions in avalanche photodiode architecture [6].…”

Section: Introductionmentioning

confidence: 99%

Photovoltaic nanocrystal scintillators hybridized on Si solar cells for enhanced conversion efficiency in UV

2008

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Abstract:We propose and demonstrate semiconductor nanocrystal based photovoltaic scintillators integrated on solar cells to enhance photovoltaic device parameters including spectral responsivity, open circuit voltage, short circuit current, fill factor, and solar conversion efficiency in the ultraviolet. Hybridizing (CdSe)ZnS core-shell quantum dots of 2.4 nm in diameter on multi-crystalline Si solar cells for the first time, we show that the solar conversion efficiency is enhanced 2 folds under white light illumination similar to the solar spectrum. Such nanocrystal scintillators provide the ability to extend the photovoltaic activity towards UV. Bawendi, "(CdSe)ZnS core-shell quantum dots: synthesis and characterization of a size series of highly luminescent nanocrystallites," J. Phys. Chem. B 101, 9463-9475 (1997). 13. M. A Hines and P. Guyot-Sionnest, "Synthesis and characterization of strongly luminescent ZnS-capped CdSe nanocrystals," J.

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Ultraviolet avalanche photodiode in CMOS technology

Cited by 20 publications

References 10 publications

PNP pin phototransistor with modulation-doped base

PNP pin phototransistor with modulation-doped base

High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region

Photovoltaic nanocrystal scintillators hybridized on Si solar cells for enhanced conversion efficiency in UV

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