Ultraviolet (340–390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix

Abstract

InAs nanocrystals embedded in SiO2 matrix have been fabricated by a radio-frequency magnetron co-sputtering technique without postannealing. X-ray photoelectron spectra and Raman spectroscopy strongly suggest the existence of InAs nanocrystals in the SiO2 matrix. From the optical absorption spectrum, the absorption edge exhibits a very large blueshift of 3.3 eV with respect to that of bulk InAs. The double-peak ultraviolet photoluminescence is observed. Our experimental results show that this double-peak phenomenon originates from the radiative recombination of the quantum-confined electron-heavy hole excitons and electron-split-off hole excitons.

Self-formation of InAs quantum dots on SiO x /semiconductor substrates by molecular beam deposition

“…12) InAs nanocrystals have been fabricated on SiO 2 =Si substrates by molecular beam epitaxy (MBE) 13) and in SiO x matrices by cosputtering. 14) However, luminescence from InAs QDs on SiO 2 films has not been clearly observed. In order to fabricate InAs QDs on an oxide film, InAs polycrystallinity should be suppressed on the oxide surface.…”

Sol–gel synthesis and optical properties of size controlled Indium Arsenide nanocrystals embedded in silica glasses

“…Until now, many authors [33][34][35] reported that InAs quantum dots grown in the self-organized Stranski-Krastanov mode by metal organic vapor-phase epitaxy (MOVPE) or molecular beam epitaxy (MBE) exhibit a strong PL line peaking near 1.3 mm. Shi et al [8] reported the observation of ultraviolet (340-390 nm) PL from InAs nanocrystals embedded in SiO 2 films fabricated by cosputtering of InAs and SiO 2 . In this work, the near-infrared PL with peaks at 3.4 mm is observed for the first time.…”

“…Shi and Zhang et al fabricated some III-V semiconductors nanocrystals embedded in SiO 2 thin films by radio-frequency magnetron co-sputtering [3,[8][9][10][11][12][13][14][15], such as GaAs, InAs, InSb, InP, GaSb, In 0.2 G 0.8 As, InAs x P 1Àx , and Ga 1Àx In x Sb. A double-peak photoluminescence (PL) with peaks at 342 and 388 nm was observed in the InAs/SiO 2 composite thin film [8]. Kanemitsu and White et al also prepared some III-V semiconductors nanocrystals embedded in SiO 2 glass by sequential ion implantation and thermal annealing technique [1,[16][17][18] such as GaAs, GaN.…”

“…Justus et al reported on the impregnation of Vycor glass with GaAs and InP nanocrystals using metal organic chemical vapor deposition and the nonlinear optical properties of these nanocrystallite composites [5][6][7]. Shi and Zhang et al fabricated some III-V semiconductors nanocrystals embedded in SiO 2 thin films by radio-frequency magnetron co-sputtering [3,[8][9][10][11][12][13][14][15], such as GaAs, InAs, InSb, InP, GaSb, In 0.2 G 0.8 As, InAs x P 1Àx , and Ga 1Àx In x Sb. A double-peak photoluminescence (PL) with peaks at 342 and 388 nm was observed in the InAs/SiO 2 composite thin film [8].…”

Molecular beam deposition of high-density InAs quantum dots on SiOx films

“…InAs nanocrystals have been fabricated on SiO 2 /Si substrate by molecular beam epitaxy (MBE) 17) and in SiO x matrix by co-sputtering technique. 18) However, luminescence from InAs QDs on the SiO 2 film has not been clearly observed. In order to fabricate InAs QDs on the oxide film, the InAs polycrystalline should be suppressed on the oxide surface.…”