Ultrathin β-tellurium layers grown on highly oriented pyrolytic graphite by molecular-beam epitaxy

Chen, Jinglei; Dai, Yawei; Ma, Yaqiang; Dai, Xianqi; Ho, Wingkin; Xie, Maohai

doi:10.1039/c7nr04085g

Cited by 139 publications

(116 citation statements)

References 37 publications

Supporting

Mentioning

102

Contrasting

Order By: Relevance

“…In addition, the nearly isotropic in-plane optical absorbance yields stronger absorption than that of those nanowires or nanoplates in the α'-phase, which was a result of the inter-chain (intralayer) CLQB as extended from previously found interlayer cases of other 2D layers. The highest mobility was found in the CLQB dominant direction; this is largely out of our exception and Note added: During the preparation for this manuscript, we became aware that few-layer α-Te samples have been synthesized in large scale and fabricated into electronic devices [58] and the synthesis of it was also realized by molecular beam epitaxy [63,64], as well as the βand γphases were theoretically discussed [65]. Including Fig.…”

Section: Resultsmentioning

confidence: 99%

Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties

et al. 2018

View full text Add to dashboard Cite

Few-layer Tellurium, an elementary semiconductor, succeeds most of striking physical properties that black phosphorus (BP) offers and could be feasibly synthesized by simple solution-based methods. It is comprised of non-covalently bound parallel Te chains, among which covalent-like feature appears. This feature is, we believe, another demonstration of the previously found covalent-like quasi-bonding (CLQB) where wavefunction hybridization does occur. The strength of this inter-chain CLQB is comparable with that of intra-chain covalent bonding, leading to closed stability of several Te allotropes. It also introduces a tunable bandgap varying from nearly direct 0.31 eV (bulk) to indirect 1.17 eV (2L) and four (two) complex, highly anisotropic and layer-dependent hole (electron) pockets in the first Brillouin zone. It also exhibits an extraordinarily high hole mobility (~10 5 cm 2 /Vs) and strong optical absorption along the non-covalently bound direction, nearly isotropic and layer-dependent optical properties, large ideal strength over 20%, better environmental stability than BP and unusual crossover of force constants for interlayer shear and breathing modes. All these results manifest that the fewlayer Te is an extraordinary-high-mobility, high optical absorption, intrinsic-anisotropy, lowcost-fabrication, tunable bandgap, better environmental stability and nearly direct bandgap semiconductor. This "one-dimension-like" few-layer Te, together with other geometrically similar layered materials, may promote the emergence of a new family of layered materials. KeywordsTwo-dimensional systems, First-principles calculations, Tellurium, High carrier mobility, Covalent-like quasi-bonding, One-dimension-like layered materials --------* wji@ruc.edu.cn § contributed equally to this work

show abstract

Section: Resultsmentioning

confidence: 99%

Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Therefore, it has been assumed that the interaction along the chain is strong and covalent, while between the chains is weak. Some papers claim that the inter-chain interaction is van der Waals (vdW) type 5,8,[11][12][13][14][15][16][17] . In anisotropic materials, the transport along weak interaction direction is usually much slower than that along chemical bond directions.…”

Section: Introductionmentioning

confidence: 99%

Tellurium: Fast Electrical and Atomic Transport along the Weak Interaction Direction

2018

View full text Add to dashboard Cite

In anisotropic materials, the electrical and atomic transport along the weak interaction direction is usually much slower than that along the chemical bond direction. However, Te, an important semiconductor composed of helical atomic chains, exhibits nearly isotropic electrical transport between intrachain and interchain directions. Using first-principles calculations to study bulk and few-layer Te, we show that this isotropy is related to similar effective masses and potentials for charge carriers along different transport directions, benefiting from the delocalization of the lone-pair electrons. This delocalization also enhances the interchain binding, and thus facilitates diffusion of vacancies and interstitial atoms across the chains, which together with the fast intrachain diffusion enable rapid self-healing of these defects at low temperature. Interestingly, the interstitial atoms diffuse along the chain via a concerted rotation mechanism. Our work reveals the unconventional properties underlying the superior performance of Te while providing insight into the transport in anisotropic materials.

show abstract

“…Tellurium films show p-type conduction (Begona et al, 2015), because of lattice defects acting as acceptors. The band gap about 0.34 eV (Chen et al, 2017) and the carrier concentration at room temperature is in the range of (1-5) × 10 18 cm -3…”

Section: Literature Survey: Metal Chalcogenide Thin Filmsmentioning

confidence: 99%

Atomic force microscopy studies on sulfur-, selenium- and tellurium-based metal chalcogenide thin films: A review

Soonmin¹

2017

Afr. J. Pure Appl. Chem.

View full text Add to dashboard Cite

Sulfur, selenium and tellurium-based metal chalcogenide films have been prepared using various deposition methods. Investigation of morphological properties of the generated surface structures on chalcogenide thin films using atomic force microscopy technique was reported. The purpose of this work is to describe past important research findings that are related to atomic force microscopy technique.

show abstract

Ultrathin β-tellurium layers grown on highly oriented pyrolytic graphite by molecular-beam epitaxy

Cited by 139 publications

References 37 publications

Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties

Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties

Tellurium: Fast Electrical and Atomic Transport along the Weak Interaction Direction

Atomic force microscopy studies on sulfur-, selenium- and tellurium-based metal chalcogenide thin films: A review

Contact Info

Product

Resources

About