Ultrathin wafer handling in 3D Stacked IC manufacturing combining a novel ZoneBOND&amp;#x2122; temporary bonding process with room temperature peel debonding

Phommahaxay, Alain; Jourdain, Anne; Verbinnen, Greet; Woitke, Tobias; Bisson, Peter; Gabriel, Manal M.; Spieß, W.; Guerrero, Alice; McCutcheon, Jeremy; Puligadda, Rama; Bex, Pieter; Eede, Axel Van den; Swinnen, Bart; Beyer, Gerald; Miller, Andy; Beyne, Eric

doi:10.1109/3dic.2012.6262943

Cited by 29 publications

(6 citation statements)

References 3 publications

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“…We have already compared the thinning performance on blanket wafers (no frontside topography) of two materials from Brewer Science: the spin-on ZoneBOND ® 5150 material [3,4] and the BrewerBOND ™ dry film that is laminated onto the carrier wafers prior to bonding [5]. In this paper, we build further on these 2 material performance and we demonstrate their ability to comply with high-topography wafers containing 50µm Cu pillars frontside.…”

Section: Introductionmentioning

confidence: 91%

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Temporary bonding for High-topography Applications: Spin-on Material Versus Dry Film

Jourdain

Phommahaxay

Verbinnen

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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Handling wafers with sub-100 µm thicknesses requires a support or carrier wafer during handling, transport and processing in a semiconductor process line. This thin wafer support system should be very stable during these operations but should also allow for easy wafer debonding. Therefore, room temperature debonding methods are the favored solutions, in particular, room temperature peel debonding, which is one the industry focuses on today. We have estimated that a TTV of less than 2µm is required to enable a 'soft' backside via reveal process for temporary bonding material thicknesses less than 20µm. For high frontside topography applications involving Cu pillars or C4 types of bumps, the challenge is to maintain a low post-grinding TTV value while processing the device wafer with thick temporary bonding materials (typically thicker than 50µm). Reducing the postthinning TTV can be done either by reducing the edge bead effect of the spin-on temporary bonding material, or by looking into novel types of material applications such as thick film lamination. In this paper, we compare the thinning performance in terms of post-grinding TTV of two materials from Brewer Science: the thick spin-on ZoneBOND ® 5150 material and the experimental BrewerBOND TM dry film.

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Section: Introductionmentioning

confidence: 91%

“…This process was already described [3] and implemented for the first time on blanket wafers [3,4]. This step is performed at room temperature in a peel-off type of process in a SUSS DB12T debonder as described in Figure 10.…”

Section: Room-temperature Thin Wafer Debondingmentioning

confidence: 99%

Temporary bonding for High-topography Applications: Spin-on Material Versus Dry Film

Jourdain

Phommahaxay

Verbinnen

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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“…ZoneBOND method [8] was employed to do the temporary bonding (TB) in our process flow. Details of integration flow of TB and backside via revealing (BSR) can be found in [9].…”

Section: Tsi Backside Processmentioning

confidence: 99%

Demonstration of OSAT compatible 300 mm through Si interposer

Liu

Liew

Lau

et al. 2013

2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013)

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“…These vertically stacked chips can be interconnected via through silicon via (TSV) that enables faster performance by shortening interconnection length. While 3D IC provides many advantages over conventional 2D IC, there have arisen new manufacturing and reliability issues, for example, temporary bonding/debonding [3], keep-away-zone of TSV [4], etc. According to recent studies, thermal management among stacked chips becomes serious since IC performance can be affected by the heat generated in neighboring layers [5].…”

Section: Introductionmentioning

confidence: 99%

Analysis of thermal effects of through silicon via in 3D IC using Infrared microscopy

Shin

Kim

2015

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/

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Thermal management of 3D IC is an important factor in terms of performance and reliability. In this study, the feasibility of Cu TSV as a heat dissipation path was experimentally investigated. 40 μm thick Si wafer was pointheated at 50 ℃, 100 ℃, 150 ℃ and 200 ℃ and surface temperature profile on the other side was observed using IR microscope. Specimens with TSV showed higher maximum temperature and larger hot area than ones without TSV above 100 ℃, which implies TSV delivered the heat faster than Si bulk and can be used as a fast heat dissipation path. In a two tier stacked structure, the effect of TSV was not noticeable because of thick substrate wafer.

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Ultrathin wafer handling in 3D Stacked IC manufacturing combining a novel ZoneBOND™ temporary bonding process with room temperature peel debonding

Cited by 29 publications

References 3 publications

Temporary bonding for High-topography Applications: Spin-on Material Versus Dry Film

Temporary bonding for High-topography Applications: Spin-on Material Versus Dry Film

Demonstration of OSAT compatible 300 mm through Si interposer

Analysis of thermal effects of through silicon via in 3D IC using Infrared microscopy

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