Ultrathin two-dimensional multi-element Si pin photodiode array for multipurpose applications

Metzler, Richard A.; Goushcha, Alexander O.; Hicks, Chris; Bartley, Ed

doi:10.1117/12.528371

Cited by 2 publications

(3 citation statements)

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“…A number of experiments have been performed previously to characterize arrays opto-electrical properties and to compare them with those of the conventional pin photodiode arrays 7,8 . This work extends our studies of the arrays performance and describes such characteristics as the electrical crosstalk, noise, and shunt resistance and responsivity temperature coefficients.…”

Section: Resultsmentioning

confidence: 99%

“…Figure 1 shows schematically the structure of the array elements. The deep front-side p-type (boron) diffusion served as the anodes 7 . The backside of the wafer was uniformly doped with phosphorus (n-type doping) forming the die cathode.…”

Section: Device Structure and Designmentioning

confidence: 99%

“…An alternative solution proposed recently suggests building the structure with isolated diffusion walls between active elements that span the whole thickness of the die 6,7 . This paper presents the results of performance studies of such thin photodiode arrays and their comparison with the results obtained for the conventional back-illuminated arrays.…”

Section: Introductionmentioning

confidence: 99%

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Noise performance and temperature coefficients studies for the back-illuminated, thin silicon pin photodiode arrays

Goushcha¹,

Tabbert²,

Goushcha³

2006

SPIE Proceedings

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Noise characteristics of the backlit, pin photodiode arrays having different vertical structures were studied. We showed that in many cases, the non-optical crosstalk between adjacent elements determines the noise performance and detectivity of the array pixels. For the arrays with the structure described in our recent works, the crosstalk always remained well below 0.01%, which allowed reaching the minimum noise level of ~ 10 -15 A/√Hz determined by the thermal noise. In contrast, for the arrays built applying conventional structures the crosstalk was two orders of magnitude higher, which noticeably decreased the sensitivity of the pixels increasing their noise and switching their operation towards background-limited performance. The background signal originated from the non-optical crosstalk and produced a noise level significantly higher that the thermal noise. We also compared the temperature coefficients for different arrays. For the structures with improved electrical crosstalk, the measured value of the shunt resistance temperature coefficient was typically below 8 %/C and the responsivity temperature coefficient value did not exceed +0.02%/C within the spectral range from 450 through 800 nm. The advantages and drawbacks of application of the reported in this work photodiode arrays in high quality imaging systems are discussed.

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Section: Resultsmentioning

confidence: 99%

Section: Device Structure and Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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