Ultrathin semiconductor films for NH3 gas sensors prepared by vertical phase separation

Wang, Xiaohong; Liu, Zhen; Wei, Shiyu; Ge, Feng; Liu, Lingyun; Zhang, Guobing; Ding, Yunsheng; Qiu, Longzhen

doi:10.1016/j.synthmet.2018.06.010

Cited by 14 publications

(17 citation statements)

References 30 publications

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“…Blended films of P3HT and insulating polymers such as poly(methyl methacrylate) (PMMA) and PS show vertical phase separation after spin-coating and present double-layered blended films with P3HT on the top and insulator on the bottom. [31,[38][39][40] In this study, the UV-vis-NIR spectra of the solid films after different O 2 plasma reactive ion etching (RIE) times showed that P3HT and SIS also underwent vertical phase separation (Figure 1b). The P3HT characteristic absorption peaks at ≈560 and 610 nm disappeared after only 10 s O 2 plasma etching, indicating that P3HT was located on the top surface.…”

Section: Fabrication and Characterization Of P3ht/sis Blended Filmsmentioning

confidence: 58%

Ultrathin Polythiophene Films Prepared by Vertical Phase Separation for Highly Stretchable Organic Field‐Effect Transistors

Wang

Zhu

Liu

et al. 2021

Adv Elect Materials

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focused on stretchable electronic devices, including photovoltaic devices, [4] lightemitting devices, [5] sensors, [6] and transistors. [7][8][9] Currently, two main strategies are used to produce stretchable devices. The first involves transforming the geometry of conventional brittle materials into mesh, [10] serpentine, [11] crack, [12] and longitudinal wave [13] structures, which reduces the deformation of the active material. Another approach is to produce intrinsically stretchable materials. Intrinsically stretchable devices have been extensively researched because of their potential to produce low-cost, large-area, and highdensity devices, as well as their seamless integration into stretchable applications.To produce an intrinsically stretchable device, each component that makes up the device must be stretchable. One of the current challenges is to produce an intrinsically stretchable semiconductor layer because obtaining high charge transport properties requires crystalline or semi-crystalline polymers, while mechanical flexibility requires amorphous polymers. [14][15][16] Thus, a balance between crystalline and amorphous morphologies seems to be ideal for achieving stretchable semiconducting polymers. Semiconducting polymers with good mechanical and electrical properties can be obtained via molecular design and chemical synthesis, for example by main-chain engineering [17][18][19][20][21] and side-chain engineering. [22][23][24][25][26] In contrast to the complex chemical synthesis methods described above, the physical blending of polymeric semiconductors with insulating elastomers is a simple and effective way to obtain intrinsically stretchable semiconducting polymers. Due to the different solvent interaction parameter of the polymers, the blended polymers will phase separate, and the interpenetrating polymer networks will enhance the mechanical deformability due to the continuous film structure. [27][28][29][30][31][32] At the same time, the original semiconductor polymer acts as the charge transport material in a device, while the insulating polymeric elastomer provides the device with elasticity. Precise control of the film structure in the blend system may be an effective strategy to achieve intrinsically stretchable semiconducting poly mers. Poly-3-hexylthiophene (P3HT)/elastomer blends have been reported as a feasible approach to enhance Physically blending semiconducting conjugated polymers with elastomeric materials and precisely controlling the resulting film structure provides an effective strategy to obtain intrinsically stretchable semiconducting polymers. Here, vertically phase-separated ultrathin poly(3-hexylthiophene) (P3HT) and polystyrene-b-polyisoprene-b-polystyrene (SIS) blend films are developed for one-step fabrication of semiconductor and insulator layers of organic field effect transistors (OFETs). The phase-separated structure, surface morphology, and tensile deformation are characterized by UV-vis absorption spectroscopy, atomic force microscopy, and optical microscopy. The ble...

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Section: Fabrication and Characterization Of P3ht/sis Blended Filmsmentioning

confidence: 58%

Ultrathin Polythiophene Films Prepared by Vertical Phase Separation for Highly Stretchable Organic Field‐Effect Transistors

Wang

Zhu

Liu

et al. 2021

Adv Elect Materials

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“…For example, the polymer/polymer blend of diketopyrrolopyrrole–thiophene (DPP–T; P1) and poly(N-vinyl carbazole) (PVK) exhibited great semiconducting properties with stable charge transport at high temperatures [23]; the small molecule/polymer blend of 2,7-dioctyl(1)benzothieno(3,2-b)(1)benzothiophene (C8-BTBT) and polystyrene (PS) afforded a high field-effect mobility exceeding 10.0 (cm 2 /Vs) [24]. Furthermore, for regulation of the semiconductors’ crystallinity during the phase separation process, ultra-thin flexible OTFT devices and high-performance gas sensors were realized by poly(3-hexylthiophene-2,5-diyl) (P3HT):poly(methyl methacrylate) (PMMA) blend films [25,26,27,28]. These existing works have also indicated that ideal vertical phase separation between insulating polymers and organic semiconductors may happen during the coating process and thus provide a new simple route for a one step process for both dielectrics and semiconductors.…”

Section: Introductionmentioning

confidence: 99%

One-Step Coating Processed Phototransistors Enabled by Phase Separation of Semiconductor and Dielectric Blend Film

et al. 2019

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Fabrication of organic thin-film transistors (OTFTs) via high throughput solution process routes have attracted extensive attention. Herein, we report a simple one-step coating method for vertical phase separation of the poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly(methyl methacrylate) (PMMA) blends as semiconducting and dielectric layers in OTFTs. These OTFTs can be used as phototransistors for ultraviolet (UV) light detection, where the phototransistors exhibited great photosensitivity of 597.6 mA/W and detectivity of 4.25 × 1010 Jones under 1 mW/cm2 UV light intensity. Studies of the electrical properties in these phototransistors suggested that optimized P3HT contents in the blend film can facilitate the improvement of film morphology, and therefore form optimized vertical phase separation of the PMMA and P3HT. These results indicate that the simple one-step fabrication method creates possibilities for realizing high throughput phototransistors with great photosensitivity.

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“…Qiu et al used vertical phase separation of polymer blends to obtain ultrathin P3HT films with thicknesses as low as 2.0 nm by varying the P3HT/poly (methyl methacrylate) (PMMA) blending ratio. 31 The obtained devices achieved NH 3 sensing with 31.1% response sensitivity (10 ppm NH 3 ). Also, the performance of NH 3 sensors was found inversely proportional to the film thickness.…”

Section: Nh 3 and Ammonia Gas Sensorsmentioning

confidence: 89%

Recent progress in organic field‐effect transistor‐based chem/bio‐sensors

Luo

Liu

2022

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Recent decades have witnessed the huge successes of organic field‐effect transistors (OFETs) and their applications. Among them, OFET‐based sensors have shown promising applications in the field of food safety, industrial security, environmental, and health monitoring. This is due to their advantages in solution processability, flexibility, light weight, and variety in molecular design. This review highlights recent progress in OFET‐based chemical and biological sensors in gas and liquid phase, especially for the past 5 years. The analytes range from small molecules to large biomolecules. The optimizations of OFET devices for sensors, including the semiconducting layers, dielectric layers, electrodes, and their interfaces etc., are illustrated. And their relationships with sensing parameters (sensitivity, selectivity, and response time) as well as the sensing mechanisms are given. Finally, the remaining challenges are discussed. We expect that this review can offer inspiration for future design of OFET‐based sensors.

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Ultrathin semiconductor films for NH3 gas sensors prepared by vertical phase separation

Cited by 14 publications

References 30 publications

Ultrathin Polythiophene Films Prepared by Vertical Phase Separation for Highly Stretchable Organic Field‐Effect Transistors

Ultrathin Polythiophene Films Prepared by Vertical Phase Separation for Highly Stretchable Organic Field‐Effect Transistors

One-Step Coating Processed Phototransistors Enabled by Phase Separation of Semiconductor and Dielectric Blend Film

Recent progress in organic field‐effect transistor‐based chem/bio‐sensors

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