Ultrathin Quasi-Monocrystalline Silicon Films for Electronic Devices

Rinke, Titus J.; Bergmann, Ralf B.; Brüggemann, R.; Werner, Jérémie

doi:10.4028/www.scientific.net/ssp.67-68.229

Cited by 33 publications

(24 citation statements)

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“…The enhanced optical absorption in thin silicon with nanovoids has already been reported experimentally [1][2][3][4] and also theoretically [1,5,6]. However, little work has been done on the electrical behaviour of thin silicon layers with nanovoids, though there has been reported work on computing the effective carrier density of other materials [7,8].…”

Section: Introductionmentioning

confidence: 89%

“…A sudden increase of the current density to a moderately high value (∼60-100 mA cm −2 ) for a few seconds creates a very thin (sub-µm) buried layer of higher porosity ( 50%) between the thick low porosity layer and the substrate. The double porous layer is finally annealed at high temperature from 900 to 1100 • C for times between 30 and 120 min in high vacuum [2,3] or hydrogen ambient [9][10][11]. The low porosity layer is then transformed into a monocrystalline layer termed QMS [2,3] or QMPS [5,6] that can itself act as a device layer or may be used as a seed layer for growing a silicon epitaxy layer over it.…”

Section: Fabrication Of the Qmps Layer And Its Propertiesmentioning

confidence: 99%

“…The recrystallized layer preserves the orientation of the original crystal lattice. The absorption coefficient of the film is significantly enhanced compared to that of bulk silicon over a wide spectral range [2,3]. The hole mobility of QMPS material formed by Rinke et al [2] from a p-type starting wafer (resistivity of 0.05 cm) having initial porosity ∼20% and annealed at high vacuum at 1050 • C has been reported to be 78 cm 2 V −1 s −1 and the minority carrier lifetime is around 0.4 µs [3].…”

Section: Fabrication Of the Qmps Layer And Its Propertiesmentioning

confidence: 99%

“…For the formation of a QMPS layer, the porous silicon is annealed at high temperature either in high vacuum [2,3] or in hydrogen ambient [9][10][11]. In the case of vacuum annealing, Si-H bonds are disrupted at high temperature, leading to depassivation of already passivated dangling bonds, resulting in increase of the density of unpassivated interface states.…”

Section: Modelling Of the Average Carrier Density In A Thin Silicon Lmentioning

confidence: 99%

“…Although a quasimonocrystalline porous silicon (QMPS) layer [2][3][4][5] is taken here for a detailed case study, this methodology is suitable for any semiconductor film with a distribution of nanosized voids 3 Author to whom any correspondence should be addressed. in its bulk.…”

Section: Introductionmentioning

confidence: 99%

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Weighted estimates for tangential boundary behaviour

Krotov¹,

Smovzh²

2006

Sb. Math.

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Thin nanocrystalline silicon layers with nanovoids exhibit enhanced optical absorption in the visible spectrum but their resistivity is usually too high for many device applications. To understand the electrical transport properties of nanocrystalline silicon with nanovoids, a simple model of carrier density based on the existence of void-silicon interface states is developed in this paper. Average carrier density as a function of doping concentration of the starting material, void radius, porosity and void-silicon interface state density of the film is computed using this model. The effect of band gap enhancement due to quantum confinement of the carriers in the nanocrystallites as well as the effect of dopant spacing has been incorporated in this model. It has been shown that reasonably high average carrier density (close to the bulk) is achievable by carefully controlling the bulk doping concentration, void radius, void-Si interface state density and porosity of the nanovoid film to some specific values. This modelling appears to be applicable for predicting the electrical behaviour of any thin semiconductor film having a distribution of nanovoids.

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Section: Introductionmentioning

confidence: 89%

Section: Fabrication Of the Qmps Layer And Its Propertiesmentioning

confidence: 99%

Section: Fabrication Of the Qmps Layer And Its Propertiesmentioning

confidence: 99%

Section: Modelling Of the Average Carrier Density In A Thin Silicon Lmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Weighted estimates for tangential boundary behaviour

Krotov¹,

Smovzh²

2006

Sb. Math.

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Perspectives of crystalline Si thin film solar cells: a new era of thin monocrystalline Si films?

Bergmann

Rinke

2000

Prog. Photovolt: Res. Appl.

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A large number of competing approaches are currently being investigated around the world to develop crystalline silicon thin film solar cells on foreign substrates. These approaches can be broadly classified according to the crystalline state of the Si films employed: (i) thin film solar cells based on nano‐ or microcrystalline Si‐films; (ii) cells fabricated from large‐grained polycrystalline Si and (iii) recent approaches utilizing the transfer of monocrystalline Si films. The paper discusses prospects and limitations of these approaches and describes device results based on the transfer of quasi‐monocrystalline Si films. Using Si absorber films epitaxially grown on quasi‐monocrystalline Si, we achieve a conversion efficiency of 13˙6% for a 4 cm2 sized thin film solar cell on glass. In contrast to the limited performance of polycrystalline Si thin film solar cells imposed by the presence of grain boundaries, transfer approaches are expected to result in thin film solar cell efficiencies in the range of 15 – 18% depending on process maturity and complexity. The transfer of monocrystalline Si films therefore opens a new avenue to an efficient and competitive Si‐based thin film technology. Copyright © 2000 John Wiley & Sons, Ltd

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From Rigid to Flexible: Progress, Challenges and Prospects of Thin c‐Si Solar Energy Devices

Gupta,

Min,

Lee

et al. 2024

Advanced Energy Materials

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The increasing adoption of solar energy as a renewable power source marks a significant shift toward clean, sustainable alternatives to conventional energy forms. A notable development in this field is the advancement of thin monocrystalline silicon (c‐Si) solar cells. Characterized by their lightweight, flexible nature, these solar cells promise to transform the renewable energy landscape with enhanced durability, adaptability, and portability. Amidst the growing demand for sustainable energy solutions, refining and evolving thin c‐Si solar cell technologies is crucial. This review comprehensively examines the latest progress in thin c‐Si solar energy conversion device technologies, offering an extensive overview of current methodologies for producing thin c‐Si films, advanced light trapping techniques, surface passivation strategies, and methods for managing thin wafers. It also explores the wide‐ranging applications of thin c‐Si solar cells. Furthermore, this article sheds light on the techno‐economic aspects, highlighting the intertwined challenges of commercializing these innovative cells. Through an in‐depth analysis of the latest advancements, this review serves as a valuable resource for researchers and industry experts, keeping them abreast of current trends and catalyzing further advancements in thin c‐Si solar cell technology.

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Ultrathin Quasi-Monocrystalline Silicon Films for Electronic Devices

Cited by 33 publications

References 0 publications

Weighted estimates for tangential boundary behaviour

Weighted estimates for tangential boundary behaviour

Perspectives of crystalline Si thin film solar cells: a new era of thin monocrystalline Si films?

From Rigid to Flexible: Progress, Challenges and Prospects of Thin c‐Si Solar Energy Devices

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