Ultrathin Films of Palladium Oxide for Oxidizing Gases Detecting

Иевлев, В. М.; Ryabtsev, S. V.; Shaposhnik, A. V.; Samoylov, A. M.; Kuschev, S. B.; Sinelnikov, A. A.

doi:10.1016/j.proeng.2016.11.357

Cited by 7 publications

(4 citation statements)

References 6 publications

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“…Initially, the sensing properties to oxidizing gases of palladium (II) oxide nanostructures were tested on ultrathin and thin films at detection of ozone and nitrogen dioxide [46,47]. The procedure of PdO thin and ultrathin films synthesis was realized by two stages.…”

Section: Fabrication Of Palladium (Ii) Oxide Nanostructuresmentioning

confidence: 99%

Palladium (II) Oxide Nanostructures as Promising Materials for Gas Sensors

Samoylov¹,

Ryabtsev²,

Popov³

et al. 2018

Novel Nanomaterials - Synthesis and Applications

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One of the most important environment monitoring problems is the detection of oxidizing gases in the ambient air. Negative impact of noxious oxidizing gases (ozone and nitrogen oxides) on human health, sensitive vegetation, and ecosystems is very serious. For this reason, palladium (II) oxide nanostructures have been employed for oxidizing gas detection. Thin and ultrathin films of palladium (II) oxide were prepared by thermal oxidation at dry oxygen of previously formed pure palladium layers on polished poly-Al 2 O 3 , SiO 2 /Si (100), optical quality quartz, and amorphous carbon/KCl substrates. At ozone and nitrogen dioxide detection, PdO films prepared by oxidation at T = 870 K have demonstrated good values of sensitivity, signal stability, operation speed, and reproducibility of sensor response. In comparison with other materials, palladium (II) oxide thin and ultrathin films have some advantages at gas sensor fabrication. Firstly, for oxidizing gas detection, PdO films with p-type conductivity are more perspective than the material with n-type conductivity. Secondly, at ambient conditions, palladium (II) oxide is insoluble in water and does not react with it. These facts are favorable for the fabrication of gas detectors because they make possible to minimize the air humidity influence on PdO sensor response values. Thirdly, the synthesis procedure of PdO films is rather simple and is compatible with planar processes of microelectronic industry.

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Section: Fabrication Of Palladium (Ii) Oxide Nanostructuresmentioning

confidence: 99%

Palladium (II) Oxide Nanostructures as Promising Materials for Gas Sensors

Samoylov¹,

Ryabtsev²,

Popov³

et al. 2018

Novel Nanomaterials - Synthesis and Applications

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“…On the other hand, the oxidizing gases (e.g., NO 2 , O 3 , and Cl 2 ) are also hazardous and toxic in ambient air. For example, the inhalation of even low concentrations of NO 2 and O 3 causes serious damage to the respiratory and nervous systems, so highly sensitive gas sensors are required to detect such gases at low concentrations. − The sensing with semiconductor-type gas sensors is based on the change in electrical resistance of the sensing materials, mainly n-type semiconductor (e.g., SnO 2 , WO 3 , and In 2 O 3 ), upon exposure to target gases. When the sensors are in air, oxygen adsorbs on the semiconducting oxide surface and traps a certain number of free electrons from the conduction band of the oxide.…”

mentioning

confidence: 99%

Effects of Gas Adsorption Properties of an Au-Loaded Porous In₂O₃ Sensor on NO₂-Sensing Properties

et al. 2021

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Gas adsorption properties of semiconductor-type gas sensors using porous (pr-) In 2 O 3 powders loaded with and without 0.5 wt % Au (Au/pr-In 2 O 3 and pr-In 2 O 3 sensors, respectively) at 100 °C were examined by using diffuse reflectance infrared Fourier transform spectroscopy, and the effect of the Au loading onto pr-In 2 O 3 on the NO 2 -sensing properties were discussed in this study. We found the following: the resistance of the Au/pr-In 2 O 3 sensor in dry air is lower than that of the pr-In 2 O 3 sensor; the DRIFT spectra of both the sensors show a broad positive band between 1600 and 1000 cm −1 in dry air (reference: in dry N 2 at 100 °C), which mainly originates from oxygen adsorbates and/or lattice oxygen, and that this band is much larger for the Au/pr-In 2 O 3 sensor than for the pr-In 2 O 3 sensor; the Au loading also increases the adsorption amount of H 2 O and the reactivity of NO 2 on the pr-In 2 O 3 surface; and the NO 2 response of the Au/pr-In 2 O 3 sensor in dry air is marginally higher than that of the pr-In 2 O 3 sensor in the examined concentration range of NO 2 (0.6−5 ppm) in dry air. The obtained results strongly support the enhancement of the NO 2 adsorption onto the pr-In 2 O 3 surface by Au loading, which contributed to the improvement of the NO 2sensing properties. KEYWORDS: semiconductor gas sensor, NO 2 , porous In 2 O 3 , loading of Au, DRIFTs

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“…PdO ultrathin films of thickness (5–10 nm) were grown on SiO 2 /Si substrate by the thermal oxidation process. The PdO ultrathin film sensor provided a very high response value of approximately 1700 towards 100 ppm O 3 with superior low LOD (10 ppm), high signal stability and reproducibility at a moderate temperature of 175°C [ 279 ].…”

Section: Greenhosue Gas Sensorsmentioning

confidence: 99%

Nanostructured metal oxide semiconductor-based sensors for greenhouse gas detection: progress and challenges

Gautam¹,

Sharma²,

Tyagi³

et al. 2021

R. Soc. open sci.

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Climate change and global warming have been two massive concerns for the scientific community during the last few decades. Anthropogenic emissions of greenhouse gases (GHGs) have greatly amplified the level of greenhouse gases in the Earth's atmosphere which results in the gradual heating of the atmosphere. The precise measurement and reliable quantification of GHGs emission in the environment are of the utmost priority for the study of climate change. The detection of GHGs such as carbon dioxide, methane, nitrous oxide and ozone is the first and foremost step in finding the solution to manage and reduce the concentration of these gases in the Earth's atmosphere. The nanostructured metal oxide semiconductor (NMOS) based technologies for sensing GHGs emission have been found most reliable and accurate. Owing to their fascinating structural and morphological properties metal oxide semiconductors become an important class of materials for GHGs emission sensing technology. In this review article, the current concentration of GHGs in the Earth's environment, dominant sources of anthropogenic emissions of these gases and consequently their possible impacts on human life have been described briefly. Further, the different available technologies for GHG sensors along with their principle of operation have been largely discussed. The advantages and disadvantages of each sensor technology have also been highlighted. In particular, this article presents a comprehensive study on the development of various NMOS-based GHGs sensors and their performance analysis in order to establish a strong detection technology for the anthropogenic GHGs. In the last, the scope for improved sensitivity, selectivity and response time for these sensors, their future trends and outlook for researchers are suggested in the conclusion of this article.

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Ultrathin Films of Palladium Oxide for Oxidizing Gases Detecting

Cited by 7 publications

References 6 publications

Palladium (II) Oxide Nanostructures as Promising Materials for Gas Sensors

Palladium (II) Oxide Nanostructures as Promising Materials for Gas Sensors

Effects of Gas Adsorption Properties of an Au-Loaded Porous In₂O₃ Sensor on NO₂-Sensing Properties

Nanostructured metal oxide semiconductor-based sensors for greenhouse gas detection: progress and challenges

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Ultrathin Films of Palladium Oxide for Oxidizing Gases Detecting

Cited by 7 publications

References 6 publications

Palladium (II) Oxide Nanostructures as Promising Materials for Gas Sensors

Palladium (II) Oxide Nanostructures as Promising Materials for Gas Sensors

Effects of Gas Adsorption Properties of an Au-Loaded Porous In2O3 Sensor on NO2-Sensing Properties

Nanostructured metal oxide semiconductor-based sensors for greenhouse gas detection: progress and challenges

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Effects of Gas Adsorption Properties of an Au-Loaded Porous In₂O₃ Sensor on NO₂-Sensing Properties