Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation

Shin, Jae–Heon; Tanuma, Masakazu; Pyo, Jooyoung; Ohmi, S.

doi:10.1109/drc55272.2022.9855780

Cited by 3 publications

(2 citation statements)

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“…We have proposed the digital/analog-operation utilizing ferroelectric nondoped HfO 2 (FeND-HfO 2 ) as a BL in the Hf-based MONOS structure, which is called FeNOS NVM, as shown in Fig. 1(a) [9][10][11][12]. The FeND-HfO 2 was able to be formed when the nitrogen concentration of HfN x CTL was x=1.1.…”

Section: Introductionmentioning

confidence: 99%

Digital/Analog-Operation of Hf-based FeNOS Nonvolatile Memory utilizing Ferroelectric Nondoped HfO2 Blocking Layer

Ohmi

2024

IEICE Trans. Electron.

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In this research, we investigated the digital/analogoperation utilizing ferroelectric nondooped HfO 2 (FeND-HfO 2 ) as a blocking layer (BL) in the Hf-based metal/oxide/nitride/oxide/Si (MONOS) nonvolatile memory (NVM), so called FeNOS NVM. The Al/HfN 0.5 / HfN 1.1 /HfO 2 /p-Si(100) FeNOS diodes realized small equivalent oxide thickness (EOT) of 4.5 nm with the density of interface states (D it ) of 5.3 10 eV -1 cm -2 which were suitable for high-speed and low-voltage operation. The flat-band voltage (V FB ) was well controlled as 80-100 mV with the input pulses of 3 V/100 ms controlled by the partial polarization of FeND-HfO 2 BL at each 2-bit state operated by the charge injection with the input pulses of +8 V/1-100 ms.

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Section: Introductionmentioning

confidence: 99%

Digital/Analog-Operation of Hf-based FeNOS Nonvolatile Memory utilizing Ferroelectric Nondoped HfO2 Blocking Layer

Ohmi

2024

IEICE Trans. Electron.

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“…[19][20][21][22] We have realized the ferroelectric nondoped HfO 2 (FeND-HfO 2 ) which was directly deposited on a Si substrate by RF magnetron sputtering utilizing strain-controlled deposition. [23][24][25][26][27][28][29][30][31][32][33][34] Although the annealing temperature was decreased to 500 °C, memory characteristics such as the MW are necessary to be improved. We have used rapid thermal annealing (RTA) for the crystallization of HfO 2 .…”

Section: Introductionmentioning

confidence: 99%

Influence of XeCl excimer laser annealing on the ferroelectric nondoped HfO₂ formation deposited on a Si(100) substrate

Ohmi,

Awakura,

Imamura

et al. 2024

Jpn. J. Appl. Phys.

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In this research, we have investigated the effect of excimer laser annealing (ELA) on the ferroelectric nondoped HfO2 (FeND-HfO2) formation deposited on Si(100) substrate. The XeCl (λ: 308 nm) ELA was irradiated as post-deposition annealing (PDA) in the N2 ambient to the 10 nm thick HfO2 deposited by RF-magnetron sputtering without substrate heating. The C-V characteristics of Al/HfO2/p-Si(100) metal/ferroelectrics/Si (MFS) diodes were gradually improved with the energy density of ELS from 170 mJ/cm2 to 270 mJ/cm2 irradiated at 200 Hz for 200 shots although charge-injection type hysteresis of 0.2-0.3 V was remained. The post-metallization annealing (PMA) at 400oC/5 min in N2/4.9%H2 ambient for Al/HfO2/p-Si(100) MFS diodes markedly improved the C-V characteristics, and negligible hysteresis with ideal flat-band voltage (VFB) was realized. The memory window (MW) of 0.42 V was achieved by the program/erase (P/E) operation with the input pulses of +3 V/100 ms and -8 V/100 ms for the MFS diode with ELA energy density of 270 mJ/cm2 at 200 Hz for 200 shots followed by the PMA..

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Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications

Shao,

Zhao,

Liu

et al. 2024

Chip

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Ultrathin Ferroelectric Nondoped HfO₂ for MFSFET with High-speed and Low-voltage Operation

Cited by 3 publications

References 1 publication

Digital/Analog-Operation of Hf-based FeNOS Nonvolatile Memory utilizing Ferroelectric Nondoped HfO<sub>2</sub> Blocking Layer

Digital/Analog-Operation of Hf-based FeNOS Nonvolatile Memory utilizing Ferroelectric Nondoped HfO<sub>2</sub> Blocking Layer

Influence of XeCl excimer laser annealing on the ferroelectric nondoped HfO₂ formation deposited on a Si(100) substrate

Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications

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Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation

Cited by 3 publications

References 1 publication

Digital/Analog-Operation of Hf-based FeNOS Nonvolatile Memory utilizing Ferroelectric Nondoped HfO<sub>2</sub> Blocking Layer

Digital/Analog-Operation of Hf-based FeNOS Nonvolatile Memory utilizing Ferroelectric Nondoped HfO<sub>2</sub> Blocking Layer

Influence of XeCl excimer laser annealing on the ferroelectric nondoped HfO2 formation deposited on a Si(100) substrate

Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications

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Ultrathin Ferroelectric Nondoped HfO₂ for MFSFET with High-speed and Low-voltage Operation

Influence of XeCl excimer laser annealing on the ferroelectric nondoped HfO₂ formation deposited on a Si(100) substrate