Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties

Giudice, Fabio; Becker, Jonathan; Rose, C. de; Döblinger, Markus; Ruhstorfer, Daniel; Suomenniemi, Linnea; Treu, Julian; Riedl, Hubert; Finley, Jonathan J.; Koblmüller, Gregor

doi:10.1039/d0nr05666a

Cited by 22 publications

(32 citation statements)

References 61 publications

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“…Finally, as NWs grow even longer, that is, longer than the surface diffusion length of the Ga adatoms, the axial growth rate starts to saturate, transforming to a sidewall diffusion limited growth regime. [ 39–41 ]…”

Section: Resultsmentioning

confidence: 99%

Sb‐Mediated Tuning of Growth‐ and Exciton Dynamics in Entirely Catalyst‐Free GaAsSb Nanowires

Jeong

Ajay

et al. 2023

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Free-standing III-V semiconductor nanowires (NW) are very attractive materials due to their unique physical properties Vapor-liquid-solid (VLS) growth is the mainstream method in realizing advanced semiconductor nanowires (NWs), as widely applied to many III-V compounds. It is exclusively explored also for antimony (Sb) compounds, such as the relevant GaAsSb-based NW materials, although morphological inhomogeneities, phase segregation, and limitations in the supersaturation due to Sb strongly inhibit their growth dynamics. Fundamental advances are now reported here via entirely catalyst-free GaAsSb NWs, where particularly the Sb-mediated effects on the NW growth dynamics and physical properties are investigated in this novel growth regime. Remarkably, depending on GaAsSb composition and nature of the growth surface, both surfactant and anti-surfactant action is found, as seen by transitions between growth acceleration and deceleration characteristics. For threshold Sb-contents up to 3-4%, adatom diffusion lengths are increased ≈sevenfold compared to Sb-free GaAs NWs, evidencing the significant surfactant effect. Furthermore, microstructural analysis reveals unique Sb-mediated transitions in compositional structure, as well as substantial reduction in twin defect density, ≈tenfold over only small compositional range (1.5-6% Sb), exhibiting much larger dynamics as found in VLS-type GaAsSb NWs. The effect of such extended twin-free domains is corroborated by ≈threefold increases in exciton lifetime (≈4.5 ns) due to enlarged electron-hole pair separation in these phase-pure NWs.

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Section: Resultsmentioning

confidence: 99%

Sb‐Mediated Tuning of Growth‐ and Exciton Dynamics in Entirely Catalyst‐Free GaAsSb Nanowires

Jeong

Ajay

et al. 2023

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“…All NWs were grown as periodic arrays on Si (111) substrate using selective-area molecular beam epitaxy (SA-MBE). To realize site-selective growth, the Si (111) substrates were prepatterned by nanoimprint lithography (NIL) or electron beam lithography (EBL) to create mask patterns with different pitches 8 . For InAs-AlAsSb core-shell NWs, InAs cores were overgrown for 30 min with an AlAsSb shell at growth temperature of 425 °C and for another 10 min with a GaSb cap layer to prevent oxidation of the AlAsSb 9 .…”

Section: Sample Preparationmentioning

confidence: 99%

Time resolved infrared spectroscopy for hot carrier dynamics in InAs-AlAsSb core-shell nanowires

Daniel¹,

Esmaielpour²,

Giudice³

et al. 2023

Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII

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Semiconductor nanowires (NWs) have shown robust hot carrier effects due to their small dimensions. Here, we study the cooling mechanisms of hot electrons in the time domain via transient absorption spectroscopy. Probe energies below the bandgap are used to determine the evolution of the carrier effective mass while probe energies above the bandgap track the conduction band occupation. From excitation intensity dependent measurements, we confirm that electron-hole interactions are a major cooling channel at large carrier density, given the high ratio of mh/me of InAs. Our experiments indicate that this cooling channel is amplified in passivated core-shell NWs. We associate this effect with spatial carrier separation caused by Fermi-level pinning in unpassivated NWs. In core-shell NWs, bands are considerably more flat which increases radiative recombination and electron-hole scattering with the latter cooling the hot electron population. Our results highlight the advantages of carrier separation if high carrier densities are to be used for hot phonon bottlenecks.

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“…Moreover, in this case, the smallest diameter obtained for self-catalyzed growth is around 10 nm, which was obtained with an accurate control of the contact angle. In general, reaching nanowire diameters in the sub-30 nm range by bottom-up growth—which would enable quantum confinement functionalities—is presently considered a challenging task, and the possibility to realize large area arrays of controlled nanowires in that scale range still needs optimization [ 5 , 171 , 172 ]. Moreover, changes in diameter along the NW body (tapering and radial vapor-solid growth) and local random or non-random fluctuations of the diameter are often observed.…”

Section: Influence Of the Pattern Characteristicsmentioning

confidence: 99%

Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays

et al. 2021

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Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials and artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.

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Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties

Abstract: Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on...

Cited by 22 publications

References 61 publications

Sb‐Mediated Tuning of Growth‐ and Exciton Dynamics in Entirely Catalyst‐Free GaAsSb Nanowires

Sb‐Mediated Tuning of Growth‐ and Exciton Dynamics in Entirely Catalyst‐Free GaAsSb Nanowires

Time resolved infrared spectroscopy for hot carrier dynamics in InAs-AlAsSb core-shell nanowires

Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays

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