Ultrathin Bi₂O₂S nanosheet near-infrared photodetectors

Abstract

<p>Recently, a zipper two-dimensional (2D) material Bi2O2Se belonging to layered bismuth oxychalcogenide (Bi2O2X: X = S, Se, Te) family, has emerged as an alternate candidate to van der Waals 2D...</p>

Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics

“…The lateral size of the as-synthesized Bi 2 O 2 S nanosheets was ~80-200 nm with a thickness of ~2-3 nm. 85 Analogously, Ghosh et al 3À will bind Bi 3+ on the Bi-rich (001) plane, which limits the diffusion between layers along c-axis direction, and facilitates the growth along lateral direction, resulting in the formation of thinner and larger nanosheets. 86 Although hydrothermal synthesis has the advantages of low cost and high yield, the control over lateral size and thickness of 2D Bi 2 O 2 X is still unsatisfactory.…”

“…Hydrothermal synthesis is a simple and effective method for mass preparation of 2D materials, [82][83][84] (Figure 5(A)). Yan and coworkers 85 reported the synthesis of Bi 2 O 2 S nanosheets by using Bi(NO 3 ) 3 Á5H 2 O and SC(NH 2 ) 2 as precursors in concentrated alkaline (KOH and NaOH) aqueous solution. Bi(NO 3 ) 3 hydrolyzes into BiONO 3 in alkaline solution, and then the as-produced BiONO 3 reacts with SC(NH 2 ) 2 to form Bi 2 O 2 S. The chemical reactions involved in this process are as follows:…”

“…Currently, many 2). 76,83,85,86,97,[126][127][128][129][130][131][132][133][134][135][136][137] Yan and coworkers fabricated near-infrared photodetectors based on 2D Bi 2 O 2 S flakes prepared by hydrothermal synthesis (Figure 11(A)). 85 The photodetector exhibited pronounced photoresponse under 785 nm light illumination with various power densities from 0.05 to 500 mW cm À2 (Figure 11(B)).…”

Recent Progress in Short‐ to Long‐Wave Infrared Photodetection Using 2D Materials and Heterostructures

“…In one recent work, Yan and co‐workers fabricated a NIR photodetector by using ultrathin Bi 2 O 2 S nanosheets with a thickness of 2–3 nm. The IR photodetector showed excellent performance with a responsivity of 4 A W −1 , an EQE of 630%, and response time around 100 ms. [ 166 ]…”

“…In one recent work, Yan and co-workers fabricated a NIR photodetector by using ultrathin Bi 2 O 2 S nanosheets with a thickness of 2-3 nm. The IR photodetector showed excellent performance with a responsivity of 4 A W −1 , an EQE of 630%, and response time around 100 ms. [166] Nevertheless, the detection range and the sensitivity of the Bi 2 O 2 Se could be improved in a hybrid structure, that is, by coupling Bi 2 O 2 Se with PbSe QDs. Due to the atomically thin nature of 2D materials, the electric field doping has been central to the manipulation of interface band alignment between Bi 2 O 2 Se/PbSe interface.…”